BLF9G20LS-160VJ Allicdata Electronics
Allicdata Part #:

568-12794-2-ND

Manufacturer Part#:

BLF9G20LS-160VJ

Price: $ 45.67
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET LDMOS 65V 19.8DB SOT1120B
More Detail: RF Mosfet LDMOS 28V 800mA 1.81GHz ~ 1.88GHz 19.8dB...
DataSheet: BLF9G20LS-160VJ datasheetBLF9G20LS-160VJ Datasheet/PDF
Quantity: 1000
100 +: $ 41.51550
Stock 1000Can Ship Immediately
$ 45.67
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: LDMOS
Frequency: 1.81GHz ~ 1.88GHz
Gain: 19.8dB
Voltage - Test: 28V
Current Rating: --
Noise Figure: --
Current - Test: 800mA
Power - Output: 35.5W
Voltage - Rated: 65V
Package / Case: SOT-1120B
Supplier Device Package: LDMOST
Description

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BLF9G20LS-160VJ Application Field and Working Principle

BLF9G20LS-160VJ is a high power N-Channel LDMOS transistor with a maximum drain source voltage of 160V. BLF9G20LS-160VJ transistors have many applications such as RF communication, audio and power amplifier, switching, power conversion, and power supply. It is one of the most commonly used types of transistors due to its small size, high efficiency, and low cost.

Application Field

BLF9G20LS-160VJ transistors are mainly used in radio frequency (RF) applications. It can be used as amplifiers, oscillators, and mixers. It is also suitable for use in high-frequency power supplies, motor control systems, and high-efficiency power supplies. It is widely used in consumer electronics, telecommunications, automotive, and industrial control applications.

Working Principle

BLF9G20LS-160VJ transistors are N-Channel enhancement mode Field Effect Transistors. They use a gate terminal to control the drain-source current. When the gate voltage is positive with respect to the source voltage, it attracts electrons from the substrate and creates an inversion charge layer. This creates a conducting channel between drain and source. When the gate voltage is low, the electrons are swept away from the substrate, and the conducting channel disappears, thus turning the transistor off.

BLF9G20LS-160VJ transistors are extremely efficient and can operate at high power levels. This makes them ideal for power amplifier applications. They have low AC and DC power losses, high gain, low noise, and high input impedance. They also have low distortion and wide bandwidth, which makes them perfect for RF applications.

Conclusion

BLF9G20LS-160VJ transistors are one of the most widely used types of transistors. They are very efficient and can be used for a variety of applications such as RF communication, audio and power amplifier, switching, power conversion, and power supply. They have low power losses, high gain, low noise, and wide bandwidth, making them ideal for high-frequency applications.

The specific data is subject to PDF, and the above content is for reference

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