Allicdata Part #: | BLF9G24LS-230VJ-ND |
Manufacturer Part#: |
BLF9G24LS-230VJ |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | TRANS RF 230W ACC-6 |
More Detail: | RF Mosfet |
DataSheet: | BLF9G24LS-230VJ Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Obsolete |
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BLF9G24LS-230VJ is a type of transistor that typically falls under the category of field-effect transistors (FETs) and radio frequency power transistors (RF). It is typically used in areas requiring precise control over electric current, such as communications, radar, and digital circuit switching applications. It is also frequently used to amplify signals in radio frequency (RF) circuits, as well as to provide high power switching applications.
A FET operates as an electrically controlled switch by using electric fields to effect its switching operations. A FET is composed of three terminals — an input terminal, a source terminal, and an output terminal — and is designed to be operated by a electric field between source and input terminals. Furthermore, a FET has two gate terminals for changing the resistance between the source and output terminals. A voltmeter is typically used to measure the voltage difference between the source and input terminals. The operating state of the FET, which can either be on/off or active, is determined by measuring the voltage.
BLF9G24LS-230VJ features a maximum frequency of 1 GHz, with a maximum power of 24 watts in a typical 50-ohm application. It is categorized as a double-diffused RF transistor, which uses the junction of the two diffused regions to switch on and off the flow of current. The double-diffusion process used to create the BLF9G24LS-230VJ transistor is a combination of the conventional lateral PNP and vertical NPN processes. The use of lateral PNP transistors ensures improved yield and reproducibility, as well as providing better resistance against leakage currents.
The working principle of the BLF9G24LS-230VJ transistor entails the control of the output current by gating the input voltage. When the input voltage is applied to the base, the impedance between the source and the output terminals increases, resulting in an impedance effect that transfers the current flowing from the source to the output. The impedance effect is used to control the output current, by controlling the input voltage. The applied voltage acts as a gate voltage that controls the flow of current, in the same way as a gate would control the water flow in an irrigation system.
The BLF9G24LS-230VJ is a versatile transistor, with a broad range of applications. It is used in radio frequency (RF) amplifiers, frequency-modulation (FM) receivers, local area network (LAN) bridges, switching applications, and microwave circuits. It is also used in low noise amplifier (LNA) designs, antenna-feedback preamplifier systems, and VHF/UHF radio transceivers. In addition, it can be used in various linear circuits such as class A, AB, B, and C power amplifiers.
Overall, the BLF9G24LS-230VJ is an essential component for many applications in the field of RF and microwave engineering. Its use as a switch and amplifier enables high-level performance in all systems requiring precise control over electric current. Additionally, its uses in various linear circuits perfectly suit applications that need high levels of power and efficiency.
The specific data is subject to PDF, and the above content is for reference
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