BLF9G24LS-150VJ

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The BLF9G24LS-150VJ is a 0.15 GHz gallium nitride (GaN) based on a high electron mobility transistor (HEMT) technology. This a L-band, matched input and output single-ended amplifier intended for applications such as space-borne or airborne military communications, unmanned aerial vehicles (UAVs), and radio links where performance is the priority over size.

GaN HEMTs can significantly reduce the size, weight, and power (SWaP) of many microwave component designs compared with other technologies. Thus, the BLF9G24LS-150VJ is preferred over alternative semiconductor technologies in applications with severe space or weight constraints.

This device is a C-band GaN discrete amplifier that can operate in the frequency range from 0.8 to 1.3 GHz. It supports up to 64 watts of peak power and has a power gain of 17 dB at 1 GHz. The BLF9G24LS-150VJ also has a high output power, good linearity, and excellent efficiency.

The BLF9G24LS-150VJ is designed for use in high-power RF applications. It is capable of operating in the high-power range (20 W to 64 W), making it well-suited for a variety of challenging applications. These applications include communications, radar, EW and jammers, remote sensing, and satellite communication systems.

The BLF9G24LS-150VJ is a normally-off transistor that operates with a logic gate voltage. This means that the drain is switched on and off by applying a gate voltage. The gate voltage is applied between the drain and the gate, which increases or decreases the current flow through the drain. When the gate voltage is applied, the drain is closed and the current cannot flow through the drain. As the gate voltage is removed, the drain opens and the current can flow through the drain.

In addition, the gate voltage of the BLF9G24LS-150VJ controls the gate capacitance, which changes the amount of current flowing through the drain. This means that the device can be used to amplify or attenuate an incoming signal. The gain of the device can be adjusted by controlling the gate voltage, which can provide a high degree of gain control.

The BLF9G24LS-150VJ is designed for use in high power application where high output power, efficiency and linearity is needed. Its 0.15 GHz frequency range and 64 W peak power makes it an ideal choice for many different custom applications in the military, aerospace, and industrial markets. The device can also be used for power amplifiers, antenna tuning, and switching applications.

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