BLF988S,112

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The BLF988S,112 is a gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) produced by NXP Semiconductors. It is a high performance, broadband, low noise amplifier (LNA) for wireless infrastructure applications operating in the 860-2700 MHz frequency range.

This device consists of a monolithic structure with a GaAs pHEMT active layer of gallium aluminate material, with a breakdown voltage of 4V. The FET device has a gate with a width of 0.05mm and a length of 1.8mm. It is designed with a relatively low thermal resistance, and a total gate capacitance of 115 picofarads (pF).

BLF988S,112 is a single-stage, unipolar device and is typically used as a cascode LNA. This amplifying transistor provides excellent gain of 25 dB while maintaining a low noise figure of only 0.9 dB. It also offers an excellent linearity over the whole frequency range of 860-2700 MHz, and is capable of handling large signal power up to an input drive level of +30 dBm.

This pHEMT transistor is used for applications such as cellular base station operating in GSM, EDGE, WCDMA and LTE bands as well as multiple user device (MUD) applications. It is also used in point-to-point microwave radios, aerospace/defense, and industrial equipment. Additionally, it can be used for other broadband, low noise, low power amplifier applications running from 0.5 to 6 GHz.

The working principle of BLF988S,112 transistor is based on electron transport in a semiconductor material. A gate voltage has to be applied to induce an inversion layer on the semiconductor material, creating electron-holes that can transport electrons through the material. This flow of electron current is then amplified by the gate as well as by the drain-source voltage.

The transistor achieves its high linearity and gain due to its pHEMT architecture. This uses an extremely thin active layer of gallium arsenide, which has a higher electron mobility and higher electron concentration than the traditional Silicon technology.

The BLF988S,112 transistor is a high performance RF device capable of supporting wide range of applications in communications infrastructure, aerospace, and other industrial equipment. Its unique architecture and low noise figure offers excellent value for money for applications demanding reliable and efficient performance.

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