BLF9G38-10GU Allicdata Electronics
Allicdata Part #:

1603-1146-ND

Manufacturer Part#:

BLF9G38-10GU

Price: $ 26.45
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF MOSFET LDMOS SOT975C
More Detail: RF Mosfet LDMOS 3.4GHz ~ 3.8GHz 10W SOT-975C
DataSheet: BLF9G38-10GU datasheetBLF9G38-10GU Datasheet/PDF
Quantity: 177
1 +: $ 24.04710
10 +: $ 22.43680
100 +: $ 19.48090
Stock 177Can Ship Immediately
$ 26.45
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Transistor Type: LDMOS
Frequency: 3.4GHz ~ 3.8GHz
Gain: --
Current Rating: --
Noise Figure: --
Power - Output: 10W
Voltage - Rated: 28V
Package / Case: SOT-975C
Supplier Device Package: SOT-975C
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

BLF9G38-10GU is one of the multiple field effect transistors (FETs) used in radio frequency (RF) applications. Invented and developed by the famous ITT Corporation, this type of FET was first created in the early 1970s. It is an optically coupled FET utilizing a infrared light source and a transistor-like structure.

The point-contact arrangement of the FET makes it suitable for applications dealing with moderately high frequencies. It provides an economical means of providing amplification and switching for RF signals. It works on the principle of using a forward biased point-contact to create an electric field between the source and the drain that controls the conduction of electrons across the device.

BLF9G38-10GU is mainly used for providing low-noise amplification and switching in a variety of applications such as communications receivers, radar systems, and other RF instrumentation. The part is stable and has good RF characteristics in its design. Its low input capacitance also aids in reducing noise at high frequencies.

This part is manufactured through an improved fabrication process which includes an optimized guard-ring structure and an optimized source-contact structure. This improved process has enabled the FET to retain its low noise and high power capabilities. This FET can easily handle a frequency range of 0-50GHz, with an operation temperature range between -65F and +175F.

BLF9G38-10GU also features an integrated harmonic suppression filter that helps prevent the harmonic distortions which can arise from high sources of input power. The FET also features built-in protection circuits which help protect the part from damage due to high power inputs.

The BLF9G38-10GU is used for a variety of RF-related applications such as transmitting and receiving, tuneable amplifiers and receivers, voltage control units, switch matrices, and antenna control units. It is commonly used in telecommunications and defense applications. because of its wide range of application possibilities and its reliable properties, it is a well-regarded part among RF engineers.

In conclusion, BLF9G38-10GU is a well-regarded FET used in RF applications. It provides good RF characteristics and is stable and reliable when used in a variety of applications. This part has been used for a long time for providing low-noise amplification and switching, and it is a great choice for any RF-related project.

The specific data is subject to PDF, and the above content is for reference

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