BLF9G24LS-150VU

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The BLF9G24LS-150VU is a high-voltage N-channel lateral MOSFET, featuring excellent thermal stability and low RDS(on). This device is designed to lower loss and provide superior electrical performance in power amplifier applications up to a frequency of 1GHz. It is capable of high power handling, making it a suitable choice for various applications, such as microwave power amplifiers and power supply control circuits.

The BLF9G24LS-150VU consists of two mesa structure N-Channel MOSFETs in a single plastic enclosure. It is made of an N-type silicon gate, Source and Drain that are covered with an aluminum epitaxy layer. The MOSFETs are connected in parallel, with gate, Source and Drain bonded to the package. The BLF9G24LS-150VU comes in a plastic SOT-23 package, with a maximum drain-source voltage of 150V, a maximum gate-source voltage of 20V, a 10nC gate charge, and a 6A continuous drain current.

Application Field:

The BLF9G24LS-150VU is a suitable device for various applications, such as microwave power amplifiers, power supply control circuits, RF amplifiers and RF switching circuits. It is also an excellent choice for mobile communications and base station applications, due to its high power handling capacity and low RDS(on). The device also features low power loss, high current carrying capability and high gain, making it an excellent choice for high-frequency RF and microwave applications.

Working Principle:

The working principle of the BLF9G24LS-150VU is simple. When a voltage is applied to the Gate, a current is induced from Source to Drain. The current is controlled by the Gate voltage; the greater the Gate voltage, the greater the Source-Drain current. This type of MOSFET has a relatively low threshold voltage, which means that a small Gate voltage can induce a large Source-Drain current. Additionally, this MOSFET is capable of very fast switching speeds, making it ideal for RF and microwave applications. The N-Channel MOSFET also has low on-resistance (RDS(on)) and high electro-thermal stability, enabling it to withstand high power loads over a wide temperature range.

The BLF9G24LS-150VU is an excellent choice for a wide range of applications, due to its high power handling capacity and low RDS(on). Its fast switching speeds, low power loss, high current carrying capability and high gain make it an ideal choice for high-frequency RF and microwave applications. This device is also suitable for various applications, such as microwave power amplifiers, power supply control circuits, RF amplifiers and RF switching circuits.

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