BLM7G1822S-20PBY

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The BLM7G1822S-20PBY is a wideband monolithic amplifier integrated RF1 and RF2 FETs that offer excellent output power and linearity performance in the 1800 to 2500 MHz range in dual form, which is suited for both consumer and infrastructure applications. It is used in a variety of applications, including carriers, FM/VHF coaxial systems, mobile base stations, 6GHz frequency band amplification and LTE femtocell amplifier designs. It is also used in cellular phones, satellite communications, military and aerospace applications.

The BLM7G1822S-20PBY is designed for high power Wideband applications from 1800–2500 MHz with a gain of 32.3 dB (typical) and a P1dB of 18.5 dBm. The small size and high power handling capability of this new device make it ideal for outdoor and indoor applications. The BLJG1822S-20PBY has a gain flatness of 2 dB (typical) across the specified bandwidth and a noise figure of 5 dB (typical).

In addition to the high output power, the BLM7G1822S-20PBY also provides a low temperature coefficient, which is important for an efficient operation in various environments. The average drain current consumption of the device is 30mA at 24V, offering good power efficiency. The BLM7G1822S-20PBY is also compatible with popular lead-free Tin/Lead SMT compatible solders for easy application in commercial and industrial environments.

The BLM7G1822S-20PBY is a power efficient, small size, high power RF amplifier module. It is a two-stage integrated amplifier module which is based on power FETs which are the underlying technology of the high power MOSFETs or Metal-Oxide Semiconductor Field-Effect Transistors. This high frequency power FETs ensure that the MOSFET will operate at its optimum frequency and power efficiency. It is basically a power HF amplifier module that has a frequency range of 1800 to 2500MHz.

The first stage of the amplifier is the input stage which is based on a MOSFET device. The second stage is the output stage which consists of two parallel-connected FETs connected in a common-cathode configuration. The working principle of the amplifier is that it amplifies the input signal amplitude at the output stage, where the total harmonic distortion (THD) is reduced significantly. The equipment, with its high power FETs, has an amplified gain of 32.3 dB (typical) and a P1dB of 18.5 dBm.

This BLM7G1822S-20PBY amplifier has the features of a wide frequency range for operation, low THD, low temperature drift and a good power efficiency. These features are important for high performance wireless communication applications. The wide operating frequency range of this device also enables it to be used in different wireless communication applications, as it can cover different frequency bands and amplify signals with great power and lower distortions.

The BLM7G1822S-20PBY amplifier is a module that can be used in radio frequency amplifier designs for applications in mobile communications, satellite communications, military and aerospace applications. Its wide bandwidth, high power and low distortion make it a useful device for a variety of communication systems. The device is suitable for high power, wide frequency operation and provides good linearity, as well as greater efficiency and easier integration. The device is able to operate with low drain current and drain voltage and with good power efficiency, making it suitable for a variety of high power, wide frequency communication systems.

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