BLM7G1822S-80PBGY

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BLM7G1822S-80PBGY is a field-effect transistor (FET) which falls under the radio frequency (RF) category. This type of device is designed for high-frequency use and is often used in radio and telecommunications applications.

The FET is an energy-efficient device. Unlike traditional transistors, FETs do not use heat to control the current flow. Instead, a gate charge applies an electric field to the channel providing a high resistance, allowing minimal output when the gate voltage is low. This enables FETs to have a significantly higher current rating than a standard transistor.

BLM7G1822S-80PBGY is a N-type enhancement-mode FET. This particular device is a high power, normally-off FET, which means that the current is enabled when the gate is negative with respect to the source. It features very low input and output capacitance and has a maximum drain-source breakdown voltage of 80V. The device also offers high-power handling capabilities and operates at a frequency of up to 2.0GHz.

Due to its ability to operate at high frequencies, the BLM7G1822S-80PBGY is highly suitable for use in RF power amplifiers and switches, cellular base stations, and wireless infrastructure. It is also suitable for applications requiring high speed and isolation between circuits, such as routers and switches.

The main principle behind the device is the MOSFET principle. This is based on the concept of a capacitively coupled gate voltage applied between the source and drain terminals to control the channel current. When the gate voltage is low, the channel resistance is high, resulting in a reduction of drain current. When the gate voltage is increased, the channel resistance is reduced allowing more current to flow. This is what facilitates the high-frequency switching and amplification capability of the device.

Overall, BLM7G1822S-80PBGY is a high-frequency N-type MOSFET, available in a SMD package. The device is well suited for high power RF applications and features a high drain-source breakdown voltage, very low input and output capacitance, and is capable of operating at a frequency of up to 2.0GHz. With its high power handling capabilities and excellent RF characteristics, the device is an ideal choice for a variety of RF applications.

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