Allicdata Part #: | 568-12798-2-ND |
Manufacturer Part#: |
BLM7G1822S-40ABGY |
Price: | $ 22.23 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 65V 31.5DB SOT12122 |
More Detail: | RF Mosfet LDMOS (Dual) 28V 20mA 2.17GHz 31.5dB 2W ... |
DataSheet: | BLM7G1822S-40ABGY Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 20.21220 |
300 +: | $ 18.86460 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS (Dual) |
Frequency: | 2.17GHz |
Gain: | 31.5dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 20mA |
Power - Output: | 2W |
Voltage - Rated: | 65V |
Package / Case: | SOT-1212-2 |
Supplier Device Package: | 16-HSOP |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BLM7G1822S-40ABGY is a type of field effect transistor that is commonly used in radio frequency (RF) applications. It is a type of metal-oxide-semiconductor field-effect transistor (MOSFET), which makes it ideally suited for use in high-frequency and high-power devices. This particular model is manufactured by ROHM Semiconductor, and it is available in both through-hole and surface mount (SMT) packages.The BLM7G1822S-40ABGY is based on a silicon nitride channel with a thickness of around 150nm. It has a common source pin configuration and is able to provide a maximum voltage rating of 40V, as well as a drain-source on-resistance of 11mΩ. The device also has a maximum drain current of 2.2A and a maximum gate-source voltage of -5V.The working principle of the BLM7G1822S-40ABGY is relatively simple. When a voltage is applied to the gate pin, it creates an electric field which is used to “pinch” the source-to-drain current. This reduces the amount of current that is allowed to flow between the source and drain pins. The gate voltage can be adjusted to control the resistance between the source and drain pins, which makes it possible to adjust the amount of power that is allowed to pass through the device.The BLM7G1822S-40ABGY is most commonly used in RF applications, where its fast switching speeds, low on-resistance, and low voltage rating make it an ideal choice for the job. It is often used in switching power supplies, pulse power amplifiers, and radio transmitters. Additionally, it can be used in other high-frequency applications, such as RF amplifiers, RF audio amplifiers, and pulse-width modulation (PWM) circuits.Due to its low voltage and on-resistance ratings, the BLM7G1822S-40ABGY is also often used in low noise applications, such as low-noise amplifiers (LNAs) and wideband receivers. Other applications for the device include signal detection and signal conversion, as it can convert analog signals into digital signals.In conclusion, the BLM7G1822S-40ABGY is a versatile and effective transistor for a variety of RF applications. Its low voltage and on-resistance ratings make it ideal for low noise and high frequency applications, and its common-source pin configuration makes it easy to use. Additionally, its through-hole and surface mount packages make it easy to integrate into a variety of different circuits.The specific data is subject to PDF, and the above content is for reference
Related Products
Search Part number : "BLM7" Included word is 13
Part Number | Manufacturer | Price | Quantity | Description |
---|
BLM7G1822S-80PBY | Ampleon USA ... | 30.56 $ | 300 | RF FET LDMOS 65V 28DB SOT... |
BLM7G1822S-20PBGY | Ampleon USA ... | 18.35 $ | 400 | RF FET LDMOS 65V 32.3DB S... |
BLM7G1822S-40PBY | Ampleon USA ... | 22.23 $ | 100 | RF FET LDMOS 65V 31.5DB S... |
BLM7G1822S-40PBGY | Ampleon USA ... | 22.23 $ | 100 | RF FET LDMOS 65V 31.5DB S... |
BLM7G1822S-80ABY | Ampleon USA ... | 30.56 $ | 100 | RF FET LDMOS 65V 31DB SOT... |
BLM7G1822S-40ABY | Ampleon USA ... | 22.23 $ | 100 | RF FET LDMOS 65V 31.5DB S... |
BLM7G1822S-20PBY | Ampleon USA ... | 18.35 $ | 1000 | RF FET LDMOS 65V 32.3DB S... |
BLM7G1822S-40ABGY | Ampleon USA ... | 22.23 $ | 1000 | RF FET LDMOS 65V 31.5DB S... |
BLM7G1822S-80PBGY | Ampleon USA ... | 29.54 $ | 1000 | RF FET LDMOS 65V 28DB SOT... |
BLM7G22S-60PBY | Ampleon USA ... | 30.56 $ | 1000 | RF FET LDMOS 65V 31.5DB S... |
BLM7G1822S-80ABGY | Ampleon USA ... | 30.56 $ | 1000 | RF FET LDMOS 65V 31DB SOT... |
BLM7G24S-30BGY | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 31.5DB S... |
BLM7G22S-60PBGY | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 31.5DB S... |
Latest Products
MRF6S21050LR3
FET RF 68V 2.16GHZ NI-400RF Mosfet LDMOS...
MRF6S18060NR1
FET RF 68V 1.99GHZ TO270-4RF Mosfet LDMO...
MRF1550NT1
FET RF 40V 175MHZ TO272-6 WRAPRF Mosfet ...
MRF8S21100HSR3
FET RF 65V 2.17GHZ NI780SRF Mosfet LDMOS...
LET16060C
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...
LET16045C
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...