BLM7G22S-60PBY

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BLM7G22S-60PBY is a type of high-performance RF power MOSFETs manufactured by Toshiba. It is designed with advanced performance and features. This MOSFETs is suitable for various communications and telecom applications.

BLM7G22S-60PBY is a N-Channel enhancement mode MOSFET with 60 Volt drain source voltage, 0.22mΩ drain-source resistance, and -3.8V gate source voltage. It can provide peak output power of 5W@1300MHz and efficiency up to 90% in many applications. In terms of performance, the BLM7G22S-60PBY is much more efficient compared to other similar products in the market.

The package of the BLM7G22S-60PBY power MOSFETs is a lead SOT-363 with very small dimensions, optimized electrical characteristics and a combustion resistant shell. This small size makes it suitable for use in high-density electronic assemblies, where limited space is available.

The working principle of the BLM7G22S-60PBY power MOSFETs is based on the high-frequency effect – MOSFETs. This effect causes a decrease in the drain-source impedance when the MOSFETs is operating. As a result, the MOSFETs will be able to drive higher power levels.

In terms of application fields, the BLM7G22S-60PBY power MOSFETs is suitable for various communication applications, including RF transmitters, cellular phone base transceivers, broadband amplifiers, wireless LAN systems, and satellite communications. The MOSFETs is also suitable for high-power DC-DC converters, AC motors, and integrated radio circuitry in industrial and consumer control applications.

In conclusion, the BLM7G22S-60PBY power MOSFETs is a high-performance RF power MOSFETs manufactured by Toshiba and suitable for various communication and telecom applications. It has small size and is designed for operations up to 5W@1300MHz output power, maximizing efficiency up to 90%.

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