BLM7G1822S-80ABY

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	LDMOS (Dual)
Frequency:	2.17GHz
Gain:	31dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	40mA
Power - Output:	4W
Voltage - Rated:	65V
Package / Case:	SOT-1211-2
Supplier Device Package:	16-HSOPF

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BLM7G1822S-80ABY Application field and Working Principle

The BLM7G1822S-80ABY is a high performance FET (Field Effect Transistor) that has been developed specifically for RF (Radio Frequency) applications. It has a small footprint and extremely low insertion loss, making it ideal for use in various radio-frequency applications.The FET is a three-terminal device with a high input impedance and a low output impedance. The three terminals are the gate (G), the source (S), and the drain (D). The gate is the controlling element that acts like a valve, controlling the flow of current between the source and drain. The source and drain are the conductive elements that are connected to external circuitry. The working principle of an FET is based on the concept of capacitance. When a voltage is applied to the gate, it creates an electric field that alters the capacitance between the gate and the drain. This alters the resistance between the source and drain, allowing current to flow. The BLM7G1822S-80ABY is a high-performance FET that is ideal for use in various radio frequency (RF) applications. It has a small footprint and a low insertion loss, making it ideal for applications such as amplifiers, mixers, and oscillators. The FET has a high input impedance and a low output resistance, allowing it to be used in various sensitive circuits. Additionally, the FET is able to operate at very low frequencies, allowing it to be used in a wide range of RF applications. The BLM7G1822S-80ABY is a cost-effective solution for use in various RF applications. It has a small footprint, making it easy to integrate in compact designs. Additionally, the low insertion loss makes it ideal for use in sensitive circuits, allowing it to deliver a clean and accurate signal. The FET has a high input impedance and a low output resistance, allowing it to be used in a wide range of RF applications. In conclusion, the BLM7G1822S-80ABY is a high performance FET that is ideal for use in a variety of RF applications. It has a small footprint and a low insertion loss, making it ideal for use in sensitive circuits. Additionally, the FET is able to operate at very low frequencies, making it ideal for a wide range of RF applications. As a cost-effective solution, the BLM7G1822S-80ABY is an excellent choice for designers looking to incorporate an RF FET into their designs.

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