BLM7G1822S-80PBY Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Transistors are electronic components that use the electronic charge of their conductive material to switch electrical signals when used in specific applications. FETs, or field effect transistors, are a specific type of transistor that use a controlling "gate" voltage to act as a switch between source and drain. The BLM7G1822S-80PBY is a N-channel RF FET deployed in various applications.

The BLM7G1822S-80PBY is an N-channel FET with an average gain of 14 dB and an absolute gate threshold voltage of -2V. It operates at a gate-drain voltage of 8 volts, a drain-source voltage of -75 volts and a source current of 175 milliamps with a temperature range of -55 to 125°C. The device has a low gate-drain capacitance of 1.0 pF, making it capable of high frequency operation. The high frequency gain of the device is 20 dB and the noise figure is 15 dB.

The BLM7G1822S-80PBY is used in high-frequency RF switching applications, such as radio frequency power amplifiers, signal converters and signal processors. It can be used in low-power RF signal processing such as signal switching and multiplexing. The device is also used in communications devices such as wireless access points and wireless repeaters. It is also deployed for signal switching for signal detection and demodulation of digitally modulated signals.

The working principle of the BLM7G1822S-80PBY depends on the gate voltage. The FET works in three modes, depending on the gate voltage. When the gate voltage is zero, the FET is in the cutoff mode in which there is no drain current. When the gate voltage is positive, the FET is in the saturation region and the drain current is at its highest value. When the voltage is negative, the drain current is in the triode mode and is controlled by the gate voltage.

The FET works as a switch or amplifier depending on its operation mode. When the FET is in the cut-off region, the drain current is zero and the FET acts like an open switch. Similarly, when the FET is in the saturation region, the drain current is maximum and the FET acts like a closed switch. The FET acts as an amplifier when it is in the triode region. The gain of the transistor is dependent on the gate voltage and the output current is linearly proportional to the gate voltage, thus making the FET suitable for applications requiring amplification of small signals.

In conclusion, the BLM7G1822S-80PBY is an N-channel RF FET typically used for high frequency signal switching and amplification applications. The FET operates in three independent modes, depending on the input gate voltage. This makes the device suitable for a variety of RF applications. The device also has a low gate capacitance, making it capable of high frequency operation.

The specific data is subject to PDF, and the above content is for reference