Allicdata Part #: | 568-12800-2-ND |
Manufacturer Part#: |
BLM7G1822S-40PBGY |
Price: | $ 22.23 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 65V 31.5DB SOT12121 |
More Detail: | RF Mosfet LDMOS (Dual) 28V 40mA 1.81GHz ~ 2.17GHz ... |
DataSheet: | BLM7G1822S-40PBGY Datasheet/PDF |
Quantity: | 100 |
100 +: | $ 20.21220 |
300 +: | $ 18.86460 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS (Dual) |
Frequency: | 1.81GHz ~ 2.17GHz |
Gain: | 31.5dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 40mA |
Power - Output: | 4W |
Voltage - Rated: | 65V |
Package / Case: | SOT-1212-3 |
Supplier Device Package: | 16-HSOP |
Base Part Number: | BLM7G1822 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BLM7G1822S-40PBGY is a kind of FET, or field-effect transistor, and specifically, an RF (radio frequency) MOSFET (metal oxide semiconductor field-effect transistor). FETs are semiconductor devices which, primarily, are used for the purpose of voltage amplification. One of the most impressive advantages of FETs is their ability to transfer the input signal from source to load with no appreciable distortion of the signal, particularly in comparison with other types of transistors.
BLM7G1822S-40PBGY is a special type of FET designed for use in RF applications. It consists of a semiconductor gate and a substrate, usually made of silicon, and usually a metal oxide, such as aluminum oxide or boron oxide, is put on the gate. The metal oxide acts as an insulator, allowing the voltage applied to the gate to be modulated. This type of FET consumes very little power and generates almost no heat when operating. Furthermore, because FETs do not require a dedicated bias voltage, they are ideal for use in portable, low power applications.
The working principle of BLM7G1822S-40PBGY is based on the concept of a depletion region. The depletion region is the space between the source and the drain where no carriers can move due to the lack of a voltage field. When voltage is applied, however, the depletion region is reduced, allowing the carriers and the flow of current which can be modulated by the voltage applied to the gate. Thus, the output current can be accurately regulated by the voltage applied to the gate.
BLM7G1822S-40PBGY is used in a wide range of applications, especially in RF communication and electronic equipment, such as satellite broadcasting, radar, cell phones, Wi-Fi, RFID, RF amplifiers, and other communication systems. The small size and low power requirements make this type of FET perfect for use in portable electronics, where battery life is a critical factor. Furthermore, its excellent signal transfer capability makes it ideal for applications that require accurate and noise-free signal transmission, such as medical imaging and microwave devices.
Having discussed the application field and working principle of BLM7G1822S-40PBGY, it is easy to see why it is an extremely versatile and popular component for RF applications. Not only does it consume very little power, but it also provides excellent signal transfer and accurate voltage modulation, making it an ideal choice for a wide range of applications. And, with its small size and low power requirements, it is perfect for use in portable electronics.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BLM7G1822S-80PBY | Ampleon USA ... | 30.56 $ | 300 | RF FET LDMOS 65V 28DB SOT... |
BLM7G1822S-20PBGY | Ampleon USA ... | 18.35 $ | 400 | RF FET LDMOS 65V 32.3DB S... |
BLM7G1822S-40PBY | Ampleon USA ... | 22.23 $ | 100 | RF FET LDMOS 65V 31.5DB S... |
BLM7G1822S-40PBGY | Ampleon USA ... | 22.23 $ | 100 | RF FET LDMOS 65V 31.5DB S... |
BLM7G1822S-80ABY | Ampleon USA ... | 30.56 $ | 100 | RF FET LDMOS 65V 31DB SOT... |
BLM7G1822S-40ABY | Ampleon USA ... | 22.23 $ | 100 | RF FET LDMOS 65V 31.5DB S... |
BLM7G1822S-20PBY | Ampleon USA ... | 18.35 $ | 1000 | RF FET LDMOS 65V 32.3DB S... |
BLM7G1822S-40ABGY | Ampleon USA ... | 22.23 $ | 1000 | RF FET LDMOS 65V 31.5DB S... |
BLM7G1822S-80PBGY | Ampleon USA ... | 29.54 $ | 1000 | RF FET LDMOS 65V 28DB SOT... |
BLM7G22S-60PBY | Ampleon USA ... | 30.56 $ | 1000 | RF FET LDMOS 65V 31.5DB S... |
BLM7G1822S-80ABGY | Ampleon USA ... | 30.56 $ | 1000 | RF FET LDMOS 65V 31DB SOT... |
BLM7G24S-30BGY | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 31.5DB S... |
BLM7G22S-60PBGY | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 31.5DB S... |
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