BLP10H603AZ Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BLP10H603AZ RF MOSFET is a common-source N-channel enhancement type vertical transistor manufactured by Panasonic that offers wide band-gap technology with extremely low noise performance. This transistor can be used in a variety of applications, including high gain amplifier designs, radio-frequency switching, and power amplifier design. It is also ideal for use in various radio-frequency applications.

The BLP10H603AZ is constructed with an optimized N-channel MOSFET architecture that allows for wide band-gap operation with extremely low noise performance. This transistor is designed with a very small teraohm input impedance and excellent linearity, enabling high gain amplifier designs for both wideband and narrowband applications. It also has an exceptionally low on-state resistance, making it ideal for power amplifier designs.

The BLP10H603AZ transistor is designed for an operating voltage of 60V and can be used in a variety of RF applications, including high gain amplifiers, harmonic oscillators, broadband amplifiers, digital power amplifiers, analogue power amplifiers, and switching applications. This transistor is also suitable for use in a variety of materials and processes, including CVD, Molecular Beam Epitaxy, and physical vapour deposition. It can operate at temperatures up to 150°C and still maintain its performance capabilities.

The working principle of the BLP10H603AZ RF MOSFET is based on a basic inverter circuit. This type of MOSFET transistor is designed with two gate terminals and two drains. When a gate voltage is applied, the circuit becomes inverted, providing a signal output. This transistor utilizes the remarkable characteristics of MOSFETs to provide wideband gain, low noise performance, and high current saturation. It also features an increased switching speed, making it ideal for a variety of radio-frequency applications.

The BLP10H603AZ RF MOSFET is an ideal solution for use in a variety of radio-frequency and high-gain amplifier designs. It provides wide band-gap technology with extremely low noise performance, an exceptionally low on-state resistance, and excellent linearity. This transistor is also suitable for use in various radio-frequency applications, including wideband and narrowband amplifiers, harmonic oscillators, and digital power amplifiers. It is designed with a small teraohm input impedance and can operate at temperatures up to 150°C.

The specific data is subject to PDF, and the above content is for reference