BLP10H660PGY

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The BLP10H660PGY is a high-voltage MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that acts as a power switch for RF (Radio Frequency). It has a wide range of applications and can be used in wireless power transmission, wireless charging, and telecommunication systems. It has fast switching times and can operate at frequencies up to 10 MHz.

A MOSFET is a three-terminal voltage-controlled device, which allows one type of signal, usually digital, to control the magnitude and polarity of the output signal. It is made up of four layers of semiconductor material (which can be either n-type or p-type) that are sandwiched between two electrodes (the source and drain) and the gate. When a voltage is applied to the gate, a channel is created in the semiconductor material, which turns the transistor on. The current then flows from the source to the drain.

The BLP10H660PGY has a voltage rating of 660V and a drain current of 10A. It has a low on-state resistance (RDS(on)) of 0.08 ohms and a maximum power dissipation of 370W. This makes it an ideal choice for applications that require high power efficiency, such as PA (Power Amplifier) and BD (Bobcat-driving) applications. The BLP10H660PGY is also suitable for DC/DC converters and renewable energy applications, such as solar and wind power.

The BLP10H660PGY is a depletion-mode MOSFET, which means that the gate cannot turn off the transistor when the gate is floating or has a low voltage applied. To turn it off, a negative voltage (Vgs) must be applied to the gate. The BLP10H660PGY also has a low gate charge (Qgs) of 10.7 nC, which ensures that the switching time is fast and that the power loss is minimized.

In conclusion, the BLP10H660PGY is a high-voltage MOSFET with fast switching times and low on-state resistance. It is well-suited for a wide range of applications, such as wireless charging, power amplifiers, and renewable energy systems. Its low gate charge ensures that the power loss is minimal and the switching time is fast.

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