BLP10H660PY

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	LDMOS
Frequency:	1GHz
Gain:	18dB
Voltage - Test:	50V
Current Rating:	1.4µA
Noise Figure:	--
Current - Test:	40mA
Power - Output:	60W
Voltage - Rated:	110V
Package / Case:	SOT-1223-2
Supplier Device Package:	4-HSOPF

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BLP10H660PY Application Field and Working Principle

Introduction

BLP10H660PY is a high-performance radio frequency (RF) power MOSFET device manufactured by Freescale Semiconductor. It is ideally suited for broadcast services applications. In addition to the high power level, the device also has a low gate charge and a low output capacitance, providing excellent high frequency performance.

Application Field

BLP10H660PY is a high frequency MOSFET suitable for several applications, such as radio frequency (RF) power amplifiers, oscillators, and switching circuits for telecommunications, automotive electronics, automatic test equipment, instrumentation, and motor control applications.It is particularly suitable for the design of power amplifiers in the UHF, VHF and HF bands, as well as mobile communication and digital broadcast applications. This device can also be used in RF switching applications, such as relays, attenuators and GHz-exchange multiplexers.

Working Principle

A MOSFET, or metal-oxide-semiconductor field-effect transistor, is a voltage-controlled device, which can be used in RF applications where tight gain and noise control is necessary. It is composed of a gate, a source and a drain, and works via a control voltage applied between the gate and the source terminals.In the case of the BLP10H660PY, the device is based on a small-signal enhancement mode MOSFET principle, so when a positive voltage is applied to the gate, the HfET can be "opened" or connected, allowing the current to flow from the source to the drain, and vice versa.The power MOSFET is designed to offer excellent performance, with reduction of gate charge, noise, switch on and switch off times, as well as low output capacitance, and thus providing excellent high frequency characteristics. Its high power level, as well as temperature stability and robustness, provide optimal operating when using the MOSFET in RF applications.

Conclusion

The BLP10H660PY is a high power radio frequency MOSFET from Freescale Semiconductor, ideally suited for broadcast services applications, and a wide range of other RF applications. It is based on a small-signal enhancement mode MOSFET, with low gate charge and low output capacitance, as well as excellent high frequency performance. The power MOSFET offers high power level, temperature stability and robustness, which are beneficial when used in RF applications.

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