BLP10H690PGY Allicdata Electronics
Allicdata Part #:

BLP10H690PGY-ND

Manufacturer Part#:

BLP10H690PGY

Price: $ 43.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF MOSFET LDMOS 50V 4-HSOP
More Detail: RF Mosfet LDMOS 50V 60mA 1GHz 18dB 90W 4-HSOPF
DataSheet: BLP10H690PGY datasheetBLP10H690PGY Datasheet/PDF
Quantity: 1000
100 +: $ 39.15020
Stock 1000Can Ship Immediately
$ 43.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: LDMOS
Frequency: 1GHz
Gain: 18dB
Voltage - Test: 50V
Current Rating: 1.4µA
Noise Figure: --
Current - Test: 60mA
Power - Output: 90W
Voltage - Rated: 110V
Package / Case: SOT-1224-2
Supplier Device Package: 4-HSOPF
Description

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BLP10H690PGY is a type of Field Effect Transistor (FET) that belongs to the family of Monolithic Microwave Integrated Circuits (MMIC). It is a high-power FET in the Frequency Multiplier Modulation (FMM) category. It is suitable for use in both commercial applications and professional industrial applications.

In order for an RF FET to work correctly, it must be designed to meet certain specifications. The major specifications to consider include frequency range, power levels, input and output impedance, voltage levels, and operating temperature range. The BLP10H690PGY has all of the characteristics required to meet these specifications. It has a frequency range of 3 to 27 GHz, a power range of 5 to 10 Watts, an input and output impedance of 50 Ohms, and an operating temperature range of -40 to +100°C. It also has a gate voltage of -2.5 to 5.5 V and a drain voltage of -2.5 to 15 V.

The BLP10H690PGY has a simple working principle. It works by using a gate voltage to control the drain-source current flow in the device. The gate terminal is connected to a control voltage, which can be supplied externally or provided internally by the device itself. When the voltage on the gate is increased, more electrons are drawn from the source to the drain. This results in a higher current flow, which increases the power output of the device. Conversely, when the gate voltage is decreased, fewer electrons are drawn from the source to the drain, resulting in a lower current flow and hence lower power output.

The BLP10H690PGY is suitable for use in a variety of applications. It is often used in wireless communications, radar systems, and satellite systems. Additionally, it is well-suited for use in amplifiers and other RF/microwave circuits. Its high-power capabilities make it ideal for high-powered applications such as military radios and base station radios.

In conclusion, the BLP10H690PGY is a reliable and powerful radio frequency FET. It has the desired power and frequency ranges as well as the necessary input/output impedances. Its working principle is simple and straightforward and its applications are numerous. With its high-performance capabilities, the BLP10H690PGY is a great choice for any RF/microwave circuit design.

The specific data is subject to PDF, and the above content is for reference

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