BLP10H6120PY

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BLP10H6120PY is a type of high power RF MOSFET transistor which is typically used for linear, Class-AB and Class-C high-power amplifiers, switching power supplies and communications applications. This device is one of the best RF MOSFET transistors on the market and has outstanding RF performance characteristics. It provides high power, low distortion and excellent linearity, making it well suited for use in RF power amplifiers, high efficiency switching power supplies, switching circuits and communications applications.

The BLP10H6120PY has a Gate Oxide Charge of 130nC, an Avalanche Energy of 50mJ, and a breakdown voltage of 200V. It also has a junction temperature range of -55°C to 175°C with an operating temperature range of -40°C to 125°C. The device is manufactured using a N-channel, enhancement mode MOSFET process, which allows for low on-resistance and improved high frequency switching performance. The device also has a very low RDS(on) of 7mΩ, which is suitable for high efficiency switching power supplies, as well as high RF power amplifiers, making it ideal for high power, high frequency applications.

The BLP10H6120PY transistor is a wideband, non-polar, Ultra-High Voltage MOSFET which is designed for use in Class-AB and Class-C linear power amplifiers and switching power supplies. The device has a minimum breakdown voltage of 200V and a maximum operating temperature of 125°C. It is designed to provide a high frequency, low distortion and excellent linearity, making it suitable for use in RF amplifiers, switching power supplies and communications applications. The device has outstanding switching characteristics, low on-resistance and excellent thermal performance, making it well suited for use in high power, high-frequency applications.

The BLP10H6120PY is a high voltage, high power RF MOSFET transistor which is designed to operate over a wide frequency range. It can be used for Class-AB and Class-C linear power amplifiers, switching power supplies and communications applications. The device is manufactured with a N-channel, enhancement mode MOSFET process and has excellent RF performance characteristics, including a high Q point and low loss. The device has outstanding thermal performance and a very low RDS(on), making it suitable for high efficiency high frequency switching applications. The device also has a low distortion and excellent linearity. It is well suited for use in high power, high frequency applications.

In summary, the BLP10H6120PY is a high power and high voltage RF MOSFET transistor which has been designed for use in linear, Class-AB and Class-C power amplifiers, switching power supplies and communications applications. The device has outstanding RF performance characteristics and excellent thermal performance, making it well suited for high power, high frequency applications. It has a low RDS(on), a high breakdown voltage and a minimum operating temperature of -40°C. The device is manufactured with a N-channel, enhancement mode MOSFET process and provides low distortion and excellent linearity, making it suitable for use in RF amplifiers, switching power supplies and communications applications.

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