BLP10H630PY

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

BLP10H630PY is a N-Channel Enhancement Mode MOSFET designed for use in radio-frequency (RF) applications. It is designed specifically to withstand high powered electricity distribution networks and manage the magnitude of current flow without losing any wattage. The BLP10H630PY is capable of providing high power efficiency and much higher breakdown voltages than traditional FETs.

The BLP10H630PY is a N-channel MOSFET, which is a type of transistor used in a wide range of electronic applications. It is the most common type of Field Effect Transistor (FET), used in a variety of devices such as amplifiers, TV receivers, sound systems, and even computers. What makes the BLP10H630PY so useful is its ability to process large amounts of electrical current and power. This makes it ideal for high power applications such as amplifiers and receivers.

The BLP10H630PY is designed with a high voltage rating of 630V and a maximum drain-source voltage of 600V. It is also capable of handling a maximum drain current of 10A and has a very low gate-source capacitance of 0.03pF, making it an ideal choice for RF applications. Its high power dissipation and low gate-source capacitance make it an excellent choice for RF applications such as RF transmitters, high-frequency amplifiers, and high-speed power amplifiers.

The BLP10H630PY’s working principle is based on the MOSFET’s gate-source voltage. A P-type oxide layer is applied to the gate which, when an electric potential is applied, closes off the access between the drain and source and prevents current from flowing. This technology makes MOSFETs an ideal choice for precise control of electrical current. The ability to control electrical current makes the BLP10H630PY an excellent choice for RF applications.

The BLP10H630PY has a wide range of applications. It is commonly used in high-power audio systems and amplifiers, such as those used in large concerts or professionally designed sound systems. It is also commonly used in radio-frequency amplifiers, RF transmitters, and high-speed power amplifiers. Its ability to provide precise control of electrical current makes it ideal for automotive electronics, modems and mobile phones, and LED lighting.

In conclusion, the BLP10H630PY is a N-Channel Enhancement Mode MOSFET designed specifically for use in radio-frequency applications. It has a high voltage rating of 630V and a maximum drain-source voltage of 600V. It is capable of handling a maximum drain current of 10A and has a very low gate-source capacitance of 0.03pF. Its ability to provide precise control of electrical current makes it an ideal choice for RF applications such as RF transmitters, high-frequency amplifiers, and high-speed power amplifiers. It is also commonly used in automotive electronics, modems and mobile phones, and LED lighting.

The specific data is subject to PDF, and the above content is for reference