BLP10H610Z Discrete Semiconductor Products |
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Allicdata Part #: | 568-12810-2-ND |
Manufacturer Part#: |
BLP10H610Z |
Price: | $ 12.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 104V 22DB 12VDFN |
More Detail: | RF Mosfet LDMOS (Dual), Common Source 50V 60mA 860... |
DataSheet: | BLP10H610Z Datasheet/PDF |
Quantity: | 500 |
500 +: | $ 10.95440 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS (Dual), Common Source |
Frequency: | 860MHz |
Gain: | 22dB |
Voltage - Test: | 50V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 60mA |
Power - Output: | 10W |
Voltage - Rated: | 104V |
Package / Case: | 12-VDFN Exposed Pad |
Supplier Device Package: | 12-HVSON (6x5) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BLP10H610Z multipurpose devices are used in demanding RF, digital and low frequency applications. The BLP10H610Z is a depletion-mode Junction Field Effect Transistor (JFET), and is designed for applications such as voltage-controlled resistors, signal limiter and amplifier stages. It consists of a lightly doped semiconductor material with a deposited gate metallization. The drain and source regions are heavily doped, and have a guaranteed breakdown voltage of at least 0.75V.
This device offers excellent broadband linearity, low drift characteristics and immunity to latch-up. It has a high input impedance and low output capacitance allowing for wide bandwidth operation.It features a low-noise, low-voltage and low-capacitance JFET structure that provides ultimate temperature-tracking and repeatability when used in demanding wireless and digital applications.
The working principle of the BLP10H610Z is based on a voltage-controlled gate operation. When a voltage is applied to the gate, it controls the current between the source and drain. This is done via the depletion region created between the drain and source. The gate voltage controls the size of the depletion region, which in turn modulates the amount of current flowing between the drain and source. As the gate voltage is increased, the depletion region increases, reducing the majority carrier current flow. Conversely, if the gate voltage is decreased, the depletion region decreases, allowing for an increased majority carrier current flow. This voltage-controlled gate operation allows for great variability in the amount of current that can flow between the drain and source.
In terms of application, BLP10H610Z can be used in a wide variety of systems including wireless and digital. Thanks to its low noise characteristics, it is well suited for use in sensitive HF and VHF receiver applications, as well as frequency synthesizers and other switching applications. In addition, its low-voltage and low-capacitance design make it ideal for use in low frequency digital switching applications as it minimizes distortion of RF signals.It is also used in digital circuits such as data converters and digital clock circuits. The device’s low-voltage operation also makes it suitable for use in microprocessors and other digital logic devices.
Overall, the BLP10H610Z is a great device for a wide range of applications including digital, wireless and low frequency applications. Thanks to its low-voltage operating characteristics and low-noise design, it is ideal for use in sensitive RF receiver applications. It can also be used in low-frequency digital switching applications, as it provides excellent signal integrity and signal distortion minimization. In addition, its versatile application field, along with its voltage-controlled gate operation, make it a great choice for many different types of systems.
The specific data is subject to PDF, and the above content is for reference
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