Allicdata Part #: | 1603-1076-ND |
Manufacturer Part#: |
BLS6G2731-6G,112 |
Price: | $ 63.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 60V 15DB SOT975C |
More Detail: | RF Mosfet LDMOS 32V 25mA 2.7GHz ~ 3.1GHz 15dB 6W C... |
DataSheet: | BLS6G2731-6G,112 Datasheet/PDF |
Quantity: | 81 |
1 +: | $ 57.41820 |
10 +: | $ 54.45470 |
100 +: | $ 49.26850 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 2.7GHz ~ 3.1GHz |
Gain: | 15dB |
Voltage - Test: | 32V |
Current Rating: | 3.5A |
Noise Figure: | -- |
Current - Test: | 25mA |
Power - Output: | 6W |
Voltage - Rated: | 60V |
Package / Case: | SOT-975C |
Supplier Device Package: | CDFM2 |
Base Part Number: | BLS6G2731 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BLS6G2731-6G,112 is an RF transistor used as an active device for the radio-frequency (RF) amplifier. It belongs to a category called Field-effect transistors (FETs), more specifically the MOSFETs (metal-oxide semiconductor field-effect transistors), which are unipolar transistors and requires only one kind of charge carrier for its operation. This kind of transistor is an essential component in the most complex integrated circuits and wide variety of commercial applications.
BLS6G2731-6G\'s Application Field
BLS6G2731-6G,112 is primarily used as an active device in the RF amplifiers in general-purpose switching and output stages. It is suitable to build preamplifiers, if linearity and low noise level is not essential; therefore, it is excellent for use in home audio systems and commercial applications. Other uses include VHF/UHF amplifiers and modulators for broadcast applications, automotive electronic systems, TV tuners,radar modulators and RF oscillator-mixers which are used in amateur radio.
BLS6G2731-6G\'s Working Principle
MOSFETs, as any other field-effect transistor, works in the principle of capacitance ruled by electrostatics. As it is a unipolar transistor, its operation involves only one kind of charge carrier (electrons): n-type channel transistors use only electrons, while p-type ones use only holes. In the case of BLS6G2731-6G,112, the application requires an n-type channel. As a result, the electric field built in the gate creates a depletion layer that vary from pinch-off voltage, to allow or not the flow of current through the device. This means current flow can be regulated by a small amount of gate current.
The gate-source voltage forms a capacitor, which is used to switch the device on and off. If a high positive voltage is applied to the gate, the capacitance increases, leading to an increase in gate-source current which turns the transistor on. When the source is grounded, the voltage developed across the drain-source junction reaches its maximum value, allowing high current flow through the device. The device can be turned off again by reducing the gate-source voltage.
In summary, BLS6G2731-6G,112 is an essential active device for the RF amplifiers, which works in the principle of capacitance and electrostatics. Its application field include, among others, preamplifiers, home audio systems and commercial applications, VHF/UHF amplifiers and modulators, automotive electronic systems, TV tuners,radar modulators and RF oscillator-mixers.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BLS6G2731-120,112 | Ampleon USA ... | 198.39 $ | 60 | RF FET LDMOS 60V 13.5DB S... |
BLS6G2731-6G,112 | Ampleon USA ... | 63.16 $ | 81 | RF FET LDMOS 60V 15DB SOT... |
BLS6G3135-20,112 | Ampleon USA ... | 132.24 $ | 26 | RF FET LDMOS 60V 15.5DB S... |
BLS6G2735LS-30,112 | Ampleon USA ... | 148.78 $ | 20 | RF FET LDMOS 60V 13DB SOT... |
BLS6G2735L-30,112 | Ampleon USA ... | 148.79 $ | 5 | RF FET LDMOS 60V 13DB SOT... |
BLS6G3135S-20,112 | Ampleon USA ... | 132.24 $ | 20 | RF FET LDMOS 60V 15.5DB S... |
BLS6G2731S-120,112 | Ampleon USA ... | 190.01 $ | 1000 | RF FET LDMOS 60V 13.5DB S... |
BLS6G2731S-130,112 | Ampleon USA ... | 209.01 $ | 1000 | RF FET LDMOS 60V 12DB SOT... |
BLS6G2933S-130,112 | Ampleon USA ... | 209.01 $ | 1000 | RF FET LDMOS 60V 12.5DB S... |
BLS6G3135S-120,112 | Ampleon USA ... | 197.01 $ | 20 | RF FET LDMOS 60V 11DB SOT... |
BLS6G3135-120,112 | Ampleon USA ... | 228.0 $ | 1000 | RF FET LDMOS 60V 11DB SOT... |
BLS6G2731P-200,117 | Ampleon USA ... | 0.69 $ | 1000 | RF FET LDMOS 32V SOM038RF... |
BLS6G2933P-200,117 | Ampleon USA ... | 0.0 $ | 1000 | TRANS S-BAND PWR LDMOS SO... |
FET RF 68V 2.16GHZ NI-400RF Mosfet LDMOS...
FET RF 68V 1.99GHZ TO270-4RF Mosfet LDMO...
FET RF 40V 175MHZ TO272-6 WRAPRF Mosfet ...
FET RF 65V 2.17GHZ NI780SRF Mosfet LDMOS...
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...