BLS6G2933S-130,112

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BLS6G2933S-130,112 is an RF transistor commonly used for switching, amplifying, and controlling of signals and power. It is usually classified as a type of field effect transistor (FET), notably a metal-oxide-semiconductor field-effect transistor (MOSFET), due to its structure and its mode of operation.

The BLS6G2933S-130,112 usually consists of three main components – a source, a drain, and a gate – and is given a maximum power of 130 Watts, with a maximum frequency of 1.12 GHz. It is designed to be used as an electronic switch, allowing current to pass through when the voltage on the gate exceeds a certain threshold; by lowering the voltage, it can also block the passage of current.

The actual process by which current is allowed to pass or blocked is done by applying a voltage potential on the gate. This creates an electric field which attracts electrons and creates a type of barrier or “channel” at the gate. The electrons repel other electrons that are in the channel, creating a potential barrier. When a positive voltage is applied, the barrier or channel is made higher, allowing current to pass; when a negative voltage is applied, the opposite is true, and the barrier is lowered, blocking current from passing.

In practical terms, the BLS6G2933S-130,112 is typically used for things like Wi-Fi routers, transceivers, satellite antenna systems, and other RF-based applications that use amplifying, switching, and filtering of electrical signals. It is used in a wide variety of communications applications, such as satellite and terrestrial telecommunications, HF tracking and navigation, as well as radio communications and broadcasting applications.

While transistors such as the BLS6G2933S-130,112 have a range of uses, their primary purpose is to provide efficient control of electrical signals and power. By manipulating the amount of current passing through the devices, power output can be increased, filtered, or even blocked, making devices much more efficient than traditional circuit designs.

In conclusion, the BLS6G2933S-130,112 is a field effect transistor (FET), more specifically, a metal-oxide-semiconductor field-effect transistor (MOSFET). It is designed for use as a switch, amplifier, and control element. Its maximum power is 130 Watts, with a maximum frequency of 1.12 GHz. And it is typically used in applications such as Wi-Fi routers, transceivers, satellite antenna systems, and other RF-based applications.

The specific data is subject to PDF, and the above content is for reference