BLS6G3135S-20,112

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Transistors are the unsung heroes of modern electronics. Small and inexpensive but incredibly powerful, transistors are found in most electronic devices and are incredibly versatile in their applications. One specific type of transistor, the MOSFET, is ideal for applications where a precise and powerful signal needs to be controlled and amplified. The BLS6G3135S-20,112 is an Enhanced Band-Gap, Enhancement-Mode MOSFET normally used in RF applications.

The BLS6G3135S-20,112 Characteristics

The BLS6G3135S-20,112 has a drain-source voltage of 20V and a drain-source current of 4A. It is a silicon oxide-nitride-oxide-silicon (SONOS) type of MOSFET, which means that it uses a silicon oxide nitride-oxide-silicon (SONOS) layer to help create a better field effect to control current. The BLS6G3135S-20,112 also has a very low on-state resistance (Rds(on)) of Ron = 6.3Ω.

At the maximum power, the gate threshold voltage (Vth) for this MOSFET is between 4V and 6V and its maximum continuous drain current (ID) is 12A. This MOSFET has a single-pulse Avalanche energy (EAR) of 69mJ, a maximum junction temperature (Tjmax) of 150°C, and a drain-source breakdown voltage (BVds) of 140V. In addition, it features an ESD rating of Class 3 and can operate over a wide temperature range of -55°C to 150°C.

BLS6G3135S-20,112 Applications and Working Principle

The BLS6G3135S-20,112 is ideal for RF applications such as wireless communication, satellite communications, and cellular networks, where a powerful signal needs to be precisely and effectively controlled and amplified. Due to its low on-state resistance, the BLS6G3135S-20,112 is able to offer high frequency and power amplifying performance, making it a great choice for RF applications.

The working principle of the MOSFET is based on the so-called “Field-effect”. This is a phenomenon that occurs when a voltage applied to the Gate terminal of the MOSFET creates an electric field within its semiconductor material, which in turn controls the flow of current between the drain and source terminals. When a positive voltage is applied to the Gate, it creates a depletion region around the semiconductor material, which inhibits the flow of current between the drain and source. On the other hand, when a negative voltage is applied, it creates an accumulation region which allows for current to flow freely between the drain and source. This simple yet effective control makes the MOSFET a powerful tool for amplifying and controlling RF signals.

Conclusion

The BLS6G3135S-20,112 is a powerful and versatile MOSFET designed with RF applications in mind. Its low on-state resistance and ability to operate over a wide temperature range makes it an ideal choice for wireless communication, satellite communications, and cellular networks. In addition, its Field-effect principle allows the BLS6G3135S-20,112 to amplify and control RF signals with great precision and accuracy.

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