Allicdata Part #: | BLS6G2933P-200,117-ND |
Manufacturer Part#: |
BLS6G2933P-200,117 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | TRANS S-BAND PWR LDMOS SOM038 |
More Detail: | RF Mosfet LDMOS 32V 100mA 2.9GHz ~ 3.3GHz 11dB 215... |
DataSheet: | BLS6G2933P-200,117 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 2.9GHz ~ 3.3GHz |
Gain: | 11dB |
Voltage - Test: | 32V |
Current Rating: | 66A |
Noise Figure: | -- |
Current - Test: | 100mA |
Power - Output: | 215W |
Voltage - Rated: | 60V |
Package / Case: | SOM038 |
Supplier Device Package: | SOM038 |
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The BLS6G2933P-200,117 is a RF transistor of the type MOSFET from NXP Semiconductors. This particular device has a drain source voltage of 200 volts and a maximum drain current of 6.3 milliamps. The device has a breakdown voltage of 73 volts, and a maximum noise figure of 3.6dB.
The goal of the BLS6G2933P-200,117 is to act as an amplifier for radio frequency signals. This is accomplished with the help of its unique MOSFET design. As a MOSFET, it is composed of three distinct layers – the “gate”, “source”, and “drain”. The gate layer is responsible for controlling the flow of current from the source to the drain. The source and drain layers are responsible for allowing the current to be transferred.
Under normal operating conditions, the gate layer will be charged with a specific voltage, which determines the amount of current that can flow from the source layer to the drain layer. When the gate voltage is increased, the amount of current that can flow increases, which provides more amplification to the RF signal. Likewise, when the gate voltage is reduced, less current is allowed to flow, which dampens the signal.
In addition to its function as an amplifier, the BLS6G2933P-200,117 can also be used as a switch. When the gate voltage is decreased to its lowest possible voltage, the amount of current that can flow is effectively blocked, thus turning the device off. When the gate voltage is increased again, the device is turned back on, allowing current to flow.
Due to its small size and low power requirements, the BLS6G2933P-200,117 is ideal for use in a variety of applications. Some of the most common applications for this type of transistor include RF communication systems, wireless networks, and wireless sensor networks.
The flexibility and cost-effectiveness of the BLS6G2933P-200,117 make it an attractive option for a variety of applications. Its ability to amplify signals and act as a switch make it a great choice for projects where size and cost are a primary concern. With its small size, low power consumption, and low cost, the BLS6G2933P-200,117 is the perfect choice for any application that requires a reliable RF amplifier or switch.
The specific data is subject to PDF, and the above content is for reference
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