BLS6G2731S-120,112

Series:	--
Packaging:	Tray
Part Status:	Active
Transistor Type:	LDMOS
Frequency:	2.7GHz ~ 3.1GHz
Gain:	13.5dB
Voltage - Test:	32V
Current Rating:	33A
Noise Figure:	--
Current - Test:	100mA
Power - Output:	120W
Voltage - Rated:	60V
Package / Case:	SOT-502B
Supplier Device Package:	SOT502B
Base Part Number:	BLS6G2731

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BLS6G2731S-120,112 Application Field and Working PrincipleThe BLS6G2731S-120,112 is a high-gain, high-power, N-Channel, enhancement-mode, lateral-diffused metal-oxide-semiconductor field-effect transistor (MOSFET). It is principally intended for use as an RF power amplifier in cellular and portable radio applications, including communications equipment, broadcast equipment and other equipment requiring high output power. This device is based on the vertical MOSFET process technology developed by Semtech. It offers high input impedance, fast switching speeds and low gate-source capacitance. It offers improved durability and reliability with high power handling capability. The device is well suited to use in switching applications such as DC-DC converters and power supplies. It is also suitable for use in analog and digital circuits, in particular where high current switching is required. This device is based on the vertical MOSFET structure, which ensures high breakdown voltage and low on-state resistance for superior efficiency. The vertical structure also helps keep gate leakage currents to a minimum. Its gate-source capacitance is also kept low due to the gate contact area being tightly controlled by the gate pattern. The BLS6G2731S-120,112 offers excellent thermal characteristics due to its high-density structure. Its low thermal resistance allows for a lower thermal junction temperature and thus a better performance of the device. Its high-temperature stability also ensures that it can be used in extreme conditions. The device must be operated within its safe operating area in order to prevent any possible damage. Excessive drain and gate-source voltages must be avoided. Uncontrolled short-circuit current flow must also be prevented by appropriate design techniques. The device’s working principle is based on the creation of an electric field in the channel of the device. This electric field causes an inversion of the device’s structure, in effect creating “a transistor” at the source and drain regions. As voltage is applied, the electric field strength increases and current can then flow through the channel. The drain-source voltage can then control the flow of current through the channel, forming a switch. The BLS6G2731S-120,112 is a high-performance RF power transistor designed for use in cellular and portable radio applications. It has a high-gain, high-power, N-channel structure along with low gate-source capacitance and fast switching speeds. It is suitable for use in analog and digital circuits as well as in switching applications, offering excellent thermal characteristics and high temperature stability. Its safe operating area must be respected in order to prevent any possible damage to the device.

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