Allicdata Part #: | BLS6G2731P-200,117-ND |
Manufacturer Part#: |
BLS6G2731P-200,117 |
Price: | $ 0.69 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 32V SOM038 |
More Detail: | RF Mosfet LDMOS 32V 100mA LDMOST |
DataSheet: | BLS6G2731P-200,117 Datasheet/PDF |
Quantity: | 1000 |
15 +: | $ 0.63000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | -- |
Gain: | -- |
Voltage - Test: | 32V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 100mA |
Power - Output: | -- |
Voltage - Rated: | 32V |
Package / Case: | SOM038 |
Supplier Device Package: | LDMOST |
Base Part Number: | BLS6G2731 |
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The BLS6G2731P-200,117 is a GaAs PHEMT (Pseudo-HEMT) model transistor that employs field-effect technology within a three-lead configuration. It is specifically designed for use as a power amplifier at high frequencies, including commercial, industrial, and military applications. This article will discuss the application field and working principle of the BLS6G2731P-200,117 device.
The BLS6G2731P-200,117 is well-suited for low-noise amplification in cellular and personal communications systems. Its wide frequency range (from 0.2 to 6 GHz) makes it a good choice for applications such as satellite uplink, digital broadcasting, and ground-air communication. Its enhanced input/output performance and wide dynamic range also make it a great choice for wirelessly transmitting/receiving data in a variety of ways.
The BLS6G2731P-200,117’s working principle is based on the field-effect technology employed in the device. This technology enables the transistor to effectively amplify signals with a much smaller noise figure than traditional bipolar transistors.
Field-effect transistors operate by controlling the electric field across a junction between two materials, a semiconductor and an insulator. The current flow between the two materials is variably controlled by applying an electric field across the junction. This allows the transistor to be “tuned” to a specific output frequency, resulting in an amplifier with better linearity and higher gain over a wide range of frequencies.
The BLS6G2731P-200,117’s amplifier function is based on the principle of the metal-oxide-semiconductor field-effect transistor (MOSFET). It utilizes a metal gate connected to the semiconductor substrate and insulated from it by an oxide layer. When this gate voltage is increased, the junction between the metal and the oxide layers begins to conduct, allowing current to flow from the source to the drain.
This amplifier principle enables the BLS6G2731P-200,117 to provide high levels of output power with great efficiency. It also allows for linear amplification of the input signal, meaning that distortion is kept to a minimum. The device is also efficient in terms of current drain, meaning that it is easy to operate and has long battery life.
In conclusion, the BLS6G2731P-200,117 is a GaAs PHEMT transistor model that is specifically designed for high-frequency operations. The device incorporates field-effect technology, which allows it to offer high-level output power with great efficiency and linear amplification characteristics. The device is well-suited for a variety of applications, including cellular and personal communications systems, satellite uplink, digital broadcasting, and ground-air communication.
The specific data is subject to PDF, and the above content is for reference
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