BLS6G3135S-120,112

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The BLS6G3135S-120,112 is a type of Field-Effect Transistor (FET). It belongs to the category of Radio Frequency (RF) FETs which are mostly used in radio communication circuits requiring high input impedances and high output powers. FETs in general are four-port devices in which current transferred between source and drain terminals is controlled by the voltage applied on the gate terminal. Depending on the type of FET being used, the current transferred could be either an electron current (n-type FET) or a hole current (p-type FET).

The BLS6G3135S-120,112 is an n-type FET. It has been designed to operate in microwave frequencies. It is a high-power RF FET, with a specified rating of 350W at W-band (~ 94GHz) and 8GHz. The power handling of this FET is further enhanced by the relatively low supply voltage (VDS) at 110V and 250V. Due to its relatively low power usage, the FET can be used in applications requiring high efficiency such as space and aviation communication systems, solid-state amplifiers, microwave broadcast and CATV amplifiers, cellular mobile base stations and many other applications.

In order to understand the working principle of any FET, one needs to understand the physics behind the formation of the depletion region, which is responsible for the current flow across the device. The depletion region is created by applying an increasing voltage between the gate and the source/drain terminal. A voltage increase of this nature creates an electric field within the device, which attracts and depletes the majority carriers from the regions close to the gate. This depletion creates a higher resistance between the gate and the source/drain, thus allowing current to flow only when the gate voltage is increased even further. This is the basic operating principle of a FET.

For the BLS6G3135S-120,112 device, the gate voltage is biased to the source/drain voltage difference (VDS) and the current flow between the source and drain is controlled by the gate voltage. When this voltage reaches the threshold voltage of -7V, it turns on the device and allows current to flow. When the gate voltage reaches the pinch-off voltage of -5V, it shuts off the device and no current is allowed to flow.

The BLS6G3135S-120,112 offers superior RF performance at W-band (~ 94GHz) and 8GHz, making it ideal for applications in space and aviation communication systems, solid-state amplifiers, microwave broadcast and CATV amplifiers, cellular mobile base stations and many other applications. It is also designed to be highly reliable and rugged, making it suitable for use in harsh environments with temperature fluctuations and high levels of ionising radiation.

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