BSM100GB120DLCKHOSA1

Series:	--
Part Status:	Not For New Designs
IGBT Type:	--
Configuration:	Half Bridge
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	100A
Power - Max:	830W
Vce(on) (Max) @ Vge, Ic:	--
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 125°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

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Introduction to BSM100GB120DLCKHOSA1

The Bsm100gb120dlckhosa1 is a type of Insulated Gate Bipolar Transistor (IGBT) module. It is a high current and high voltage device, used primarily in portable and automotive products such as portable adapters, computers, telecommunications, and consumer electronics. This type of module includes a unique built-in protection circuit, which provides a number of application specific functions such as thermal shutdown and overvoltage protection.

Features and Benefits of BSM100GB120DLCKHOSA1

The Bsm100gb120dlckhosa1 provides a number of unique features and benefits that make it suitable for applications in the automotive, consumer, and industrial markets. First, it has a high breakdown voltage of around 100 volts and an insulated gate voltage of 120 volts. This makes it ideal for high voltage applications where a high voltage IGBT is needed. The module also features a relatively low internal electrical resistance, which allows it to withstand higher levels of power and current. This makes it an ideal module for high power applications such as inverters, converters, and motors. Additionally, the module has an improved gate charge and power dissipation, which allow the device to operate at a higher frequency than other IGBTs. In addition, the module includes a built-in protection circuit which includes overvoltage protection and thermal shutdown. This helps to ensure that the module does not get damaged from high levels of heat or power. The built-in protection circuit also helps to improve the overall reliability of the module. Finally, the Bsm100gb120dlckhosa1 features superior switching performance and offers superior performance over other IGBTs. It also has a longer life span and can provide higher levels of power handling.

Application Field and Working Principle of BSM100GB120DLCKHOSA1

The BSM100GB120DLCKHOSA1 is primarily used in portable and automotive applications. It is ideal for applications such as portable adapters, computers, telecommunications, and consumer electronics. The module has a low gate-emitter voltage, which makes it suitable for a range of high current applications. The module also features a built-in protection circuit, which can help to protect the module from high levels of power. Additionally, the module offers superior switching performance and is capable of handling a wide range of input voltages. In terms of its working principle, the BSM100GB120DLCKHOSA1 operates by using insulated gate bipolar transistors (IGBTs). These transistors use two different terminals: a gate and an emitter. The gate is used to control the flow of current to the emitter, while the emitter is used to transfer the current to the external load. When a voltage is applied to the gate, electrons are drawn to the gate, allowing the current flow to be controlled. When the voltage is removed, the electrons are released, stopping the current flow. The BSM100GB120DLCKHOSA1 has a relatively low internal electrical resistance, which allows it to withstand high levels of power and current. This allows the module to be used in high current applications and ensures that it is suitable for a range of different applications. In summary, the BSM100GB120DLCKHOSA1 is a high voltage and current IGBT module, which is ideal for use in a range of different applications, including portable adapters, computers, telecommunications, and consumer electronics. It features a low gate-emitter voltage and a built-in protection circuit, which provides superior switching performance and helps to ensure that the module does not get damaged from high levels of power or heat.

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