BSM180D12P3C007

Series:	--
Packaging:	Bulk
Part Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:	--
Rds On (Max) @ Id, Vgs:	--
Vgs(th) (Max) @ Id:	5.6V @ 50mA
Gate Charge (Qg) (Max) @ Vgs:	--
Input Capacitance (Ciss) (Max) @ Vds:	900pF @ 10V
Power - Max:	880W
Operating Temperature:	175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	Module
Supplier Device Package:	Module

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BSM180D12P3C007 is a type of N-channel power MOSFETs array that is produced by Infineon Technologies. This product has been designed to meet the requirements of thirty ampere applications on the higher side. The major application fields of this MOSFET array include motor controls, supply regulation, uninterruptible power systems and power factor correction.

The Principle of Operation:

The working principle of BSM180D12P3C007 MOSFET array can be best understood by considering it as a load and a flow of anticipated voltage between the drain and the source. When the gate voltage is applied, it creates an inversion layer between the drain and the source. This layer helps to regulate the flow of current through the channel, whereas the number of transistors in the array helps to determine the output voltage and current of the device. Further, the addition of four thousand Vbody-Drain has helped reduce the on-state resistance and power losses.

Other Features:

Other features that help improve the performance of BSM180D12P3C007 power MOSFET array include:

• Low rDS(on) resistance
• Improved ESD characteristics
• Improved thermal properties
• Easy to use gate drivers

Overall, BSM180D12P3C007 is a great power MOSFET array that is suitable for a range of applications, such as motor control, power factor correction and switching applications. The device is easy to integrate, offers superior switching properties and low losses, making it an ideal choice for many applications.

Applications:

BSM180D12P3C007 can be used for a wide range of applications, such as for motor controls, switching applications, power factor correction and uninterruptible power systems. This power MOSFET array is also suitable for applications in the industrial, residential and commercial areas.

• Motor Control: This MOSFET array can be used for motor control applications, such as AC and DC motors and drives. BSM180D12P3C007 is capable of providing superior switching characteristics and fast operation for both low and high power applications.
• Power Factor Correction: BSM180D12P3C007 can also be used for power factor correction applications. This MOSFET array can provide superior switching characteristics and fast operation and is suitable for application in residential, commercial and industrial areas.
• Uninterruptible Power Systems: BSM180D12P3C007 can be used for uninterruptible power systems that require voltage and current regulation. This power MOSFET array can provide superior switching characteristics, fast operation, and is suitable for applications in residential, commercial and industrial areas.
• Switching Applications: BSM180D12P3C007 can also be used for switching applications. This MOSFET array can provide superior switching characteristics, fast operation and is suitable for switching applications in the industrial, residential and commercial areas.

Conclusion

In conclusion, BSM180D12P3C007 is an excellent N-channel power MOSFET array that is suitable for a range of applications such as motor control, power factor correction, uninterruptible power systems, and switching applications. This device offers superior switching characteristics and fast operation, making it ideal for a variety of applications.

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