BSM180D12P2C101

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The BSM180D12P2C101 is a high-performance 30 V N-channel MOSFET array, designed to deliver excellent switching performance and superior power handling capability. This device has been designed to optimize performance and deliver reliable operation by combining the features of a low on-resistance with a fast switching time. As such, it is ideally suited for a wide range of applications, from powering low power digital circuits to driving a high-power amplifier or motor.

The BSM180D12P2C101 is based on a N-channel MOSFET architecture, which is composed of three transistors connected in parallel. It is a current controlled device, which means that the devices’ current flow is controlled by the voltage applied to the gate terminal. The devices are also inherently logic-level compatible, which means that they can be driven with a greater amount of power even when operated at low voltage levels.

The device offers an extremely low on-resistance (RDS(on)), which helps to ensure that the current flow is low, resulting in less power dissipation. This low RDS(on) is further enhanced by the high threshold voltage of the device, which allows it to remain off even when a low drive voltage is used. The low RDS(on) also eliminates the need for a series switch or a double-pole switch, providing a much more efficient switching solution.

The BSM180D12P2C101 has been designed with a wide range of features that make it suitable for a variety of applications. It has a very low output capacitance (Coss) and a very low reverse recovery time (trr), which helps to improve the device’s switching performance. Additionally, its high slope rate (slopeRate) helps to reduce system noise when driving a load. The device can also be used for both stepper motor and H-bridge inverter applications, thanks to its high peak current capability.

The BSM180D12P2C101 is ideally suited for a wide range of applications, such as:

• Low power digital circuits
• High-power amplifiers
• DC-DC converters
• LED drivers
• Motor drivers
• Stepper motor modules
• H-bridge inverters
• Power management systems

In summary, the BSM180D12P2C101 is a high-performance 30 V N-channel MOSFET array that is designed to deliver superior power handling capability with a low on-resistance and a fast switching time. It is well-suited for a variety of applications, including low power digital circuits, high-power amplifiers, DC-DC converters, LED drivers and motor drivers. The device offers low output capacitance (Coss) and a low reverse recovery time (trr) along with a high slope rate (slopeRate). With these features, the BSM180D12P2C101 makes an excellent choice for a number of applications.

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