Allicdata Part #: | BSM10GD120DN2E3224BOSA1-ND |
Manufacturer Part#: |
BSM10GD120DN2E3224BOSA1 |
Price: | $ 39.44 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 2 LOW POWER ECONO2-1 |
More Detail: | IGBT Module Full Bridge 1200V 15A 80W Chassis Mou... |
DataSheet: | BSM10GD120DN2E3224BOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 35.85330 |
Series: | -- |
Part Status: | Not For New Designs |
IGBT Type: | -- |
Configuration: | Full Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 15A |
Power - Max: | 80W |
Vce(on) (Max) @ Vge, Ic: | 3.2V @ 15V, 10A |
Current - Collector Cutoff (Max): | 400µA |
Input Capacitance (Cies) @ Vce: | 530pF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IGBTs are a type of power transistor that combines the beneficial features of both transistors and integrated circuits. The acronym stands for insulated gate bipolar transistor and the module is composed of multiple two-pin IGBTs in one package. The BSM10GD120DN2E3224BOSA1 is specifically a power module utilizing advanced technological FWD gate turn-off (GTO) devices.
The purpose of a IGBT module is to provide improved switching performance and higher current capacity, enabling the generation of large amounts of power for applications such as AC and DC drives, renewable energy systems, solar inverters, and motor control. In the industrial world, IGBT modules are a useful tool in the design and implementation of sophisticated electrical power systems. The IGBT module employs a bias voltage of 600V and includes a range of protection systems such as temperature protection and over-voltage protection to ensure safe transfer and use of the electricity.
The working principle of the BSM10GD120DN2E3224BOSA1 can be explained as follows. The transistor is triggered by a current flowing through the gate-emitter junction. This causes electrons to flow between the emitter and collector. This creates a voltage drop between the two IGBTs, producing a controlled current between them. The current is regulated by the voltage therefore the more voltage is applied to the gate-emitter junction, the greater the current will be. The purpose of the voltage drop is to reduce the amount of energy required to transfer current from one IGBT to another.
The BSM10GD120DN2E3224BOSA1 module can be applied in a variety of industrial environments and applications. It is suitable for use in transformerless power supplies and electric power systems, current source circuits, electric power transmission, and medium frequency induction heating systems. It is also suitable for use in motor control and wind power applications. The module can also be used in medium and high power applications, such as high-speed reciprocating machinery and high-speed rotating machinery. Finally, the BSM10GD120DN2E3224BOSA1 can be used in applications requiring low harmonic distortion and high-density power.
In conclusion, the BSM10GD120DN2E3224BOSA1 is an advanced IGBT module that combines the beneficial features of both transistors and integrated circuits. The module is suitable for use in a range of industrial applications, including transformerless power supplies, electric power systems, current source circuits, electric power transmission, and motor control. It is designed to provide improved switching performance and higher current capacity, allowing for large amounts of power generation. The BSM10GD120DN2E3224BOSA1 also offers a range of protection systems to ensure safe transfer and use of the electricity.
The specific data is subject to PDF, and the above content is for reference
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