Allicdata Part #: | BSM100GB120DN2HOSA1-ND |
Manufacturer Part#: |
BSM100GB120DN2HOSA1 |
Price: | $ 97.77 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 2 MED POWER 62MM-1 |
More Detail: | IGBT Module Half Bridge 1200V 150A 800W Chassis M... |
DataSheet: | BSM100GB120DN2HOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 88.88040 |
Series: | -- |
Part Status: | Not For New Designs |
IGBT Type: | -- |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 150A |
Power - Max: | 800W |
Vce(on) (Max) @ Vge, Ic: | 3V @ 15V, 100A |
Current - Collector Cutoff (Max): | 2mA |
Input Capacitance (Cies) @ Vce: | 6.5nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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Transistors are a type of electronic component that can amplify or switch electronic signals and power. Among them, one of the most widely used transistors is the IGBT (Insulated Gate Bipolar Transistor) module, which are commonly used in high power applications including motor drives, motor control, UPS, and inverter circuits. The BSM100GB120DN2HOSA1 is one type of IGBT module that has been designed to provide superior performance and superior protection in a wide range of power applications. In this article, we will discuss the application field and working principle of the BSM100GB120DN2HOSA1.
The BSM100GB120DN2HOSA1 IGBT module is primarily used for high power applications such as motor drives, motor control, UPS, and inverter circuits. It is a low loss and low EMI device, with a current rating of up to 120A, a voltage rating of up to +1200V, and a rated temperature of 125°C. The module is capable of operating at an input voltage of up to 1200V and a switching frequency of up to 20kHz, making it ideal for use in a variety of applications. Additionally, the BSM100GB120DN2HOSA1 IGBT module is equipped with a variety of protection features, including over current, over voltage, and short circuit protection, making it a reliable and safe component for high power applications.
The working principle of the BSM100GB120DN2HOSA1 IGBT module is based on the principle of the metal-oxide-semiconductor field effect transistor (MOSFET). This type of transistor utilizes a gate-source voltage to control the current flow in the device. When the gate voltage of the device is raised, the current flow of the device is increased, and when the gate voltage of the device is lowered, the current flow is decreased. This type of transistor can be used as either a switch or amplifier, depending on the application.
The BSM100GB120DN2HOSA1 IGBT module uses a series of MOSFET transistors to control the current flow in the device. The gate voltage of each transistor is controlled by using a control circuit, which allows for precise current control. Additionally, this control circuit also helps to provide protection against over voltage, over current, and short circuit situations. This ensures that the device will remain safe and reliable in a wide range of power applications.
In conclusion, the BSM100GB120DN2HOSA1 is a high power IGBT module that is capable of controlling and protecting high power systems. This module is primarily used for motor drives, motor control, UPS, and inverter circuits. It has a current rating of up to 120A, a voltage rating of up to +1200V, and a rated temperature of 125°C. Additionally, the BSM100GB120 DN2HOSA1 IGBT module is equipped with a variety of protection features, including over current, over voltage, and short circuit protection, making it a reliable and safe component for high power applications.
The specific data is subject to PDF, and the above content is for reference
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