BSM100GB60DLCHOSA1 Allicdata Electronics
Allicdata Part #:

BSM100GB60DLCHOSA1-ND

Manufacturer Part#:

BSM100GB60DLCHOSA1

Price: $ 52.89
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT MODULE 600V 130A
More Detail: IGBT Module Single 600V 130A 445W Chassis Mount M...
DataSheet: BSM100GB60DLCHOSA1 datasheetBSM100GB60DLCHOSA1 Datasheet/PDF
Quantity: 1000
1 +: $ 48.07530
10 +: $ 45.66870
Stock 1000Can Ship Immediately
$ 52.89
Specifications
Series: --
Part Status: Not For New Designs
IGBT Type: --
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 130A
Power - Max: 445W
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 100A
Current - Collector Cutoff (Max): 500µA
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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Modularized IGBTs, such as BSM100GB60DLCHOSA1, play a key role in Industry 4.0 technology applications due to their compact design, high speed, and low power requirements. The BSM100GB60DLCHOSA1 is a fully-modularized low-loss IGBT inverter module that is suitable for medium- and high-power applications. The module has a wide turn-off capability, a wide range of transient current handling capability, and features a insulation class that is suitable for use in high voltage applications.

The application areas of the BSM100GB60DLCHOSA1 module include motor drives, industrial robots, power supplies, grid applications, UPSs, traction, welding and plasma cutting machines, wind turbines, and renewable energy systems. The module is also suitable for a wide range of applications in the automotive, aerospace, and military fields. The working principle of the BSM100GB60DLCHOSA1 module is based on the principle of an IGBT, which is an insulated-gate bipolar transistor. IGBTs are composed of two-terminal N-channel (p-type) and P-channel (n-type) field-effect transistors (FETs) that are connected together to form a three-terminal device. This arrangement makes the IGBT capable of conducting current both in forward and reverse directions.

The BSM100GB60DLCHOSA1 module uses a fully-modularized IGBT design that takes into account the complex switching and nonlinear current carrying multiple parallel IGBTs to form a single package. This allows for the reduction of conduction and switching losses which in turn improves power quality and increases switching speed. Additionally, the module features a built-in standard 3-level PFC control circuit. This ensures that it can be operated at power levels ranging from 50 A to 100 A with adjustable voltage ranges between 28 V and 40V.

The BSM100GB60DLCHOSA1 module is designed to provide high efficiency, low losses, and fast switching speed. It is capable of operating with a maximum power rating of 15 KW and up to 600 V in voltage range. This modularized IGBT is particularly useful in applications where switching losses need to be minimized and power levels need to be optimized with maximum efficiency. Additionally, the module boasts improved reliability and durability due to its high thermal stability and shorter current interruption time.

In conclusion, the BSM100GB60DLCHOSA1 module is a fully-modularized low-loss IGBT inverter module that is suitable for medium- and high-power applications. It is composed of IGBTs which are connected together to form a three-terminal device for conducting current both in forward and reverse directions. The module is designed to provide high efficiency, low losses, and fast switching speed and is suitable for a wide range of applications in the automotive, aerospace, and military fields. Overall, this IGBT module is designed to optimize power levels while minimizing switching losses.

The specific data is subject to PDF, and the above content is for reference

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