BSM150GB120DN2HOSA1

Series:	--
Part Status:	Not For New Designs
IGBT Type:	--
Configuration:	Half Bridge
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	210A
Power - Max:	1250W
Vce(on) (Max) @ Vge, Ic:	3V @ 15V, 150A
Current - Collector Cutoff (Max):	2.8mA
Input Capacitance (Cies) @ Vce:	11nF @ 25V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

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Introduction of BSM150GB120DN2HOSA1

BSM150GB120DN2HOSA1 is a type of insulated gate bipolar transistor (IGBT) module used for industrial electrical applications. It is designed with a direct thermal path and offers easy mounting to minimize thermal resistance. This module combines the advantages of fast switching speed, low on-resistance, low switching losses and high blocking voltage into a single compact module.

Features and Benefits

The BSM150GB120DN2HOSA1 IGBT module can provide various features and benefits. Its compatibility with the higher-voltage MC1000 series allows for more power and flexibility in industrial-grade applications. It offers fast switching speeds, low on-resistance, low switching losses and high blocking voltage to provide improved switching operation. In addition, the BSM150GB120DN2HOSA1 is designed with a direct thermal path and offers easy mounting to minimize thermal resistance.

Application Field and Working Principle

Due to its features and benefits, the BSM150GB120DN2HOSA1 is used in a wide range of industrial applications, such as motor drives, solar inverters, uninterruptible power supplies (UPS), and welding equipment. It can achieve high levels of performance in these applications due to its fast switching speed, low resistance, and high voltage blocking capabilities. The working principle of the BSM150GB120DN2HOSA1 is based on switching. When the gate voltage VGE is higher than a certain value, the device is activated and a conducting path is created, allowing current to flow through the device. Once the gate voltage reaches a certain level, the current flow is stopped, which is known as the OFF or blocking state. When the gate voltage reaches a higher value than the threshold level, the device is again activated, and the current can flow through it in the forward direction.

Conclusion

In conclusion, the BSM150GB120DN2HOSA1 is a type of IGBT module used for industrial electrical applications. It offers fast switching speeds, low on-resistance, low switching losses and high blocking voltage to provide improved switching operation. The BSM150GB120DN2HOSA1 is designed with a direct thermal path and offers easy mounting to minimize thermal resistance. It is commonly used in applications such as motor drives, solar inverters, uninterruptible power supplies (UPS) and welding equipment. Its working principle is based on switching, where the gate voltage is increased to create a conducting path and decreased to stop current flow.

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