Allicdata Part #: | BSM100GB120DN2KHOSA1-ND |
Manufacturer Part#: |
BSM100GB120DN2KHOSA1 |
Price: | $ 70.33 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 2 MED POWER 34MM-1 |
More Detail: | IGBT Module Half Bridge 1200V 145A 700W Chassis M... |
DataSheet: | BSM100GB120DN2KHOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 63.93370 |
Series: | -- |
Part Status: | Not For New Designs |
IGBT Type: | -- |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 145A |
Power - Max: | 700W |
Vce(on) (Max) @ Vge, Ic: | 3V @ 15V, 100A |
Current - Collector Cutoff (Max): | 2mA |
Input Capacitance (Cies) @ Vce: | 6.5nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IGBTs (Insulated Gate Bipolar Transistors) are an emerging class of semiconductor devices with ability to act both as switch and amplifier. The BSM100GB120DN2KHOSA1 is a useful module for a variety of applications. This article will examine the working principles of BSM100GB120DN2KHOSA1, as well as its application field.
Working Principle
The BSM100GB120DN2KHOSA1 is a type of IGBT module. An IGBT combines the advantages of a bipolar transistor (Fast switching and high current ratings) with the advantages of a field effect transistor (Low on resistance). An IGBT consists of three terminals: the gate, the anode, and the cathode. By applying the correct amount of voltage at the gate terminal, the IGBT can be turned either "on" or "off". When the IGBT is in the "off" state, the current does not flow between the anode and the cathode. Similarly, when it is in the "on" state, the current does flow between the two terminals.
The BSM100GB120DN2KHOSA1 is equipped with a gate driver circuit, which helps to reduce the risks associated with gate driver circuits. It also has a temperature monitor, which helps the module to remain within safe operating temperatures. Additionally, the module has a built-in protection circuit, which helps it to better withstand short circuit, overload, and reversed cable polarity. All of these features make the BSM100GB120DN2KHOSA1 an ideal choice for a variety of applications.
Application Field
The BSM100GB120DN2KHOSA1 is a type of IGBT module that is suitable for a wide range of applications. Common applications include motor control (for example, in robotics, automated equipment, and energy-saving lighting and home appliances), solar cell power conversion, welding machines, and LED drivers. This module is also suitable for AC servo drivers and adjustable speed drives. In addition, due to its low gate charge, it can be used in high-efficiency power management systems.
In conclusion, the BSM100GB120DN2KHOSA1 is a type of IGBT module that combines the advantages of a bipolar transistor and a field effect transistor. It is equipped with a gate driver circuit, a temperature monitor, and a protection circuit, making it an ideal choice for a variety of applications. Motor control, solar cell power conversion, welding machines, LED drivers, AC servo drivers, adjustable speed drives, and high-efficiency power management are all potential applications in which the BSM100GB120DN2KHOSA1 can be used.
The specific data is subject to PDF, and the above content is for reference
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