BSP125 E6327 Allicdata Electronics
Allicdata Part #:

BSP125E6327-ND

Manufacturer Part#:

BSP125 E6327

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 600V 120MA SOT-223
More Detail: N-Channel 600V 120mA (Ta) 1.8W (Ta) Surface Mount ...
DataSheet: BSP125 E6327 datasheetBSP125 E6327 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.8W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
Series: SIPMOS®
Rds On (Max) @ Id, Vgs: 45 Ohm @ 120mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The BSP125 E6327 is a type of transistor that belongs in the family of Field Effect Transistors (FETs). It is a single n-channel FET, and is primarily used as a voltage switch in SRAM designs. It is ideal for applications requiring low-end blocking voltages, such as high-speed switching or level shifting. Being a voltage switch, the BSP125 E6327 has two main components: the main transistor and a secondary transistor. The main transistor consists of a drain and a source electrode, while the secondary transistor is connected between the drain and the gate.

A voltage applied to the gate of the transistor will cause the main transistor to switch, allowing current to flow. This current then exerts a force on the secondary transistor\'s gate, causing it to switch as well. This results in the current flowing from the drain to the source, thus turning on the BSP125 E6327. As a result, the transistor can be used as a voltage switch in SRAM designs, allowing various voltage levels to be obtained.

Apart from SRAM designs, the BSP125 E6327 can be used in a variety of other applications. These include motor controllers, laser diode drivers, and AC motor speed control. It has also been used in power MOSFET applications, as well as in battery management systems. The transistor is also suitable for use in high-speed logic circuits, where speed is a primary concern.

The BSP125 E6327 is a cost-effective solution for circuits requiring low-end blocking voltages. Its design ensures that the device is able to withstand a wide range of temperatures and voltage levels. Additionally, it is relatively resistant to reverse current leakage, meaning that power dissipation is kept to a minimum. The transistor is also capable of providing high switching speeds, ensuring high levels of performance.

The BSP125 E6327 provides a good option for those looking for a cost-effective solution to their voltage switching needs. It is a reliable and efficient device that is suitable for a variety of applications. Its design guarantees that it is able to provide a consistent and reliable performance, making it the ideal choice for many electronic circuits.

The specific data is subject to PDF, and the above content is for reference

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