BSP149 E6327 Allicdata Electronics
Allicdata Part #:

BSP149E6327-ND

Manufacturer Part#:

BSP149 E6327

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 200V 660MA SOT-223
More Detail: N-Channel 200V 660mA (Ta) 1.8W (Ta) Surface Mount ...
DataSheet: BSP149 E6327 datasheetBSP149 E6327 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1V @ 400µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.8W (Ta)
FET Feature: Depletion Mode
Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
Series: SIPMOS®
Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 660mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The BSP149 E6327 is a high-performance N-channel enhancement type vertical power Mosfet, with an extremely low foot print of 4.0 X 3.2mm. It is specially designed to use in high frequency switching applications and has a maximum drain current of 2 A. The device is made with a silicon (Si) substrate and has an optimized vertical structure.

The BSP149 E6327 is widely used in high frequency switching applications such as in DC to DC converters, mobile phones, and notebook computers. The device also acts as a current switch, and performs as an ideal switch when applied in an AC or DC circuit. It has a low threshold voltage, and can turn on quickly, enabling fast switching operations. Moreover, it has a high input impedance, and consumes very low gate current.

The working principle of the BSP149 E6327 is based on the principle of the N-channel MOSFET. In the device, an N-type body layer has its drain and source connected to a gate electrode. When a voltage is applied across the gate and source, electrons in the body layer are attracted to the gate, forming an inversion layer. This inversion layer provides a conductive channel between the source and the drain. The drain current is then controlled by the voltage applied on the gate.

The BSP149 E6327 also has a wide range of features that makes it ideal for high frequency switching applications. Its rapid switching speed enables it to utilize the current in the low voltage source, which results in considerable savings in power consumption during operation. Additionally, the device has a low on-resistance, and does not have any back-gate parasitic effects, which makes it ideal for high frequency and high current applications.

The BSP149 E6327 is a high performance vertical power Mosfet, and its unique design makes it suitable for many high frequency switching applications. The device consumes very low gate current and has a low threshold voltage, allowing it to turn on quickly. Additionally, it has a wide range of features and a high input impedance, making it ideal for high frequency switching operations. With its low foot print, fast switching speed, and low on-resistance, the BSP149 E6327 is an excellent choice for high frequency switching applications.

The specific data is subject to PDF, and the above content is for reference

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