Allicdata Part #: | BSP135H6906XTSA1-ND |
Manufacturer Part#: |
BSP135H6906XTSA1 |
Price: | $ 0.73 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 600V 120MA SOT223 |
More Detail: | N-Channel 600V 120mA (Ta) 1.8W (Ta) Surface Mount ... |
DataSheet: | BSP135H6906XTSA1 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.65416 |
Vgs(th) (Max) @ Id: | 1V @ 94µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | PG-SOT223-4 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.8W (Ta) |
FET Feature: | Depletion Mode |
Input Capacitance (Ciss) (Max) @ Vds: | 146pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 4.9nC @ 5V |
Series: | SIPMOS™ |
Rds On (Max) @ Id, Vgs: | 45 Ohm @ 120mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 0V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 120mA (Ta) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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BSP135H6906XTSA1 is an N-channel enhancement mode field-effect transistor featured by low ON resistance, high current, and high breakdown voltage, which makes it a useful resource in power management applications. Its easy-to-control nature also makes it an ideal choice in a variety of applications.
The BSP135H6906XTSA1 is composed of an N-type channel inorganic semiconductor material, which is the main part of the circuit. It works as a switch to regulate the current when a voltage is applied over the gate. The mechanism of a MOSFET can be compared to that of a vacuum tube, where the application of a voltage over the gate creates a region of high current-carrying capacity. This creates an amplification of the signal current.
The primary application of the BSP135H6906XTSA1 FET is as an electronic switch or amplifier. A FET acts like a variable resistor, in which the length or width of the "resistor" can be changed depending on the existing gate voltage. When the gate voltage is increased, the resistance decreases and the current supplied to the circuit gets higher. Similarly, if the gate voltage is decreased, the resistance increases, reducing the current.
The BSP135H6906XTSA1 can be used in a wide range of applications, due to its many advantageous operating characteristics. It is particularly suited for switch mode power supplies, DC-DC converters, and motor switching applications, where its low on-resistance and high conduction current can provide improved efficiency and performance. Because of its high voltage rating, it can also be used in high voltage circuits. In addition, it has excellent frequency response, making it suitable for high-speed switching applications.
Due to its simple structure and low ON resistance, the BSP135H6906XTSA1 FET is widely used in a number of analog and digital circuits. In analog circuits, the FET can be used as an amplifier, in order to boost the signal strength of weak input signals. In digital circuits, a FET can be used as a switching device to control the current flow in the circuit, making it possible to construct complex logic circuits. It can also be used in digital-to-analog converters, generating an analog voltage proportional to the digital input.
The BSP135H6906XTSA1 FET is a versatile and reliable component, suitable for a variety of applications. Its low on-resistance, high current handling capacity, and voltage characteristics make it suitable for a variety of power switching, amplification, and control applications.
The specific data is subject to PDF, and the above content is for reference
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