BSP135H6906XTSA1 Allicdata Electronics
Allicdata Part #:

BSP135H6906XTSA1-ND

Manufacturer Part#:

BSP135H6906XTSA1

Price: $ 0.73
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 600V 120MA SOT223
More Detail: N-Channel 600V 120mA (Ta) 1.8W (Ta) Surface Mount ...
DataSheet: BSP135H6906XTSA1 datasheetBSP135H6906XTSA1 Datasheet/PDF
Quantity: 1000
1000 +: $ 0.65416
Stock 1000Can Ship Immediately
$ 0.73
Specifications
Vgs(th) (Max) @ Id: 1V @ 94µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.8W (Ta)
FET Feature: Depletion Mode
Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 5V
Series: SIPMOS™
Rds On (Max) @ Id, Vgs: 45 Ohm @ 120mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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BSP135H6906XTSA1 is an N-channel enhancement mode field-effect transistor featured by low ON resistance, high current, and high breakdown voltage, which makes it a useful resource in power management applications. Its easy-to-control nature also makes it an ideal choice in a variety of applications.

The BSP135H6906XTSA1 is composed of an N-type channel inorganic semiconductor material, which is the main part of the circuit. It works as a switch to regulate the current when a voltage is applied over the gate. The mechanism of a MOSFET can be compared to that of a vacuum tube, where the application of a voltage over the gate creates a region of high current-carrying capacity. This creates an amplification of the signal current.

The primary application of the BSP135H6906XTSA1 FET is as an electronic switch or amplifier. A FET acts like a variable resistor, in which the length or width of the "resistor" can be changed depending on the existing gate voltage. When the gate voltage is increased, the resistance decreases and the current supplied to the circuit gets higher. Similarly, if the gate voltage is decreased, the resistance increases, reducing the current.

The BSP135H6906XTSA1 can be used in a wide range of applications, due to its many advantageous operating characteristics. It is particularly suited for switch mode power supplies, DC-DC converters, and motor switching applications, where its low on-resistance and high conduction current can provide improved efficiency and performance. Because of its high voltage rating, it can also be used in high voltage circuits. In addition, it has excellent frequency response, making it suitable for high-speed switching applications.

Due to its simple structure and low ON resistance, the BSP135H6906XTSA1 FET is widely used in a number of analog and digital circuits. In analog circuits, the FET can be used as an amplifier, in order to boost the signal strength of weak input signals. In digital circuits, a FET can be used as a switching device to control the current flow in the circuit, making it possible to construct complex logic circuits. It can also be used in digital-to-analog converters, generating an analog voltage proportional to the digital input.

The BSP135H6906XTSA1 FET is a versatile and reliable component, suitable for a variety of applications. Its low on-resistance, high current handling capacity, and voltage characteristics make it suitable for a variety of power switching, amplification, and control applications.

The specific data is subject to PDF, and the above content is for reference

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