BSP125 E6433 Allicdata Electronics
Allicdata Part #:

BSP125E6433-ND

Manufacturer Part#:

BSP125 E6433

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 600V 120MA SOT-223
More Detail: N-Channel 600V 120mA (Ta) 1.8W (Ta) Surface Mount ...
DataSheet: BSP125 E6433 datasheetBSP125 E6433 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.8W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
Series: SIPMOS®
Rds On (Max) @ Id, Vgs: 45 Ohm @ 120mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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BSP125 E6433 is an enhancement mode single P-channel MOSFET (metal-oxide-semiconductor field-effect transistor) with a drain-source breakdown voltage of 75V. This device is suitable for applications that require low on-state resistance and low gate drive. Furthermore, the BSP125 E6433 operates with a wide range of gate and drain voltages, making it ideal for low-noise analog circuits, such as digital amplifiers and audio amplifiers.

Working Principle of BSP125 E6433: The BSP125 E6433 consists of a main body and a gate, with separated source and drain contacts. Inside the main body, the source and drain zones are separated by an insulating gate oxide layer. When a voltage is applied to the gate contact, a charge is induced in the gate, creating a conducting channel between the source and drain contacts. This channel is blocked when the gate voltage is removed, causing the conduction to stop.

The BSP125 E6433 is suitable for use in a range of applications that require low on-state resistance, such as load switches, power MOSFETs, lightning protection circuits, and DC/DC converters. The device is also used in higher-current applications, such as motor drives, power management, and consumer electronics.

In many motor-drive applications, the BSP125 E6433 is commonly used to control the motor speed via the drain connection. The device can be used to regulate the motor current by varying the gate voltage. This type of switching helps to provide a smooth speed control for the motor, thus enhancing performance.

The BSP125 E6433 is also used in low-noise analog circuits, such as audio amplifiers and digital amplifiers. With its low on-state resistance, the device helps to reduce noise in such circuits. Furthermore, the drift of the device parameters over temperature and the linearity of the drain current provide consistent audio performance.

The BSP125 E6433 is also well-suited for use in DC/DC converters, as it can withstand high frequencies and offers high efficiency. The low on-state resistance of the device helps to reduce power losses and improve the overall efficiency of the circuit.

In addition, the device is also used in lightning protection circuits, as the high breakdown voltage of the device can help protect circuits from voltage spikes.

In summary, the BSP125 E6433 is a versatile enhancement mode single P-channel MOSFET designed for low on-state resistance and gate drive applications. It is suitable for use in motor drives, low-noise analog circuits, lightning protection circuits, and DC/DC converters.

The specific data is subject to PDF, and the above content is for reference

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