Allicdata Part #: | BSP129L6327HTSA1TR-ND |
Manufacturer Part#: |
BSP129L6327HTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 240V 350MA SOT-223 |
More Detail: | N-Channel 240V 350mA (Ta) 1.8W (Ta) Surface Mount ... |
DataSheet: | BSP129L6327HTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 108µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | PG-SOT223-4 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.8W (Ta) |
FET Feature: | Depletion Mode |
Input Capacitance (Ciss) (Max) @ Vds: | 108pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 5.7nC @ 5V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 6 Ohm @ 350mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 0V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 350mA (Ta) |
Drain to Source Voltage (Vdss): | 240V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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BSP129L6327HTSA1 is a FET (Field Effect Transistor) that is frequently used in power management applications. It is a single MOSFET with low on-state resistance and high voltage rating, making it suitable for use in a wide range of circuits. This article will provide an overview of the application field and working principle of the BSP129L6327HTSA1.
The BSP129L6327HTSA1 is frequently used in power management applications. It is often used in the design of power systems and efficiency-improving solutions. The device offers low on-state resistance and is capable of switching currents of up to 1.3A. It has a voltage rating of up to 63V, making it suitable for use in a wide range of circuits. It is also capable of amplifying small input signals, allowing it to be used in various applications including audio amplifiers, current sensing circuits, and voltage control circuits.
The BSP129L6327HTSA1 is a FET (Field Effect Transistor) that operates by modulating the size of an electric current or voltage that enters the gate of the transistor. The device consists of three terminal electrodes known as the source, the drain, and the gate. The source and the drain form a channel through which current can flow when the gate bias voltage is applied. A small input signal applied to the gate can modulate the current flowing between the source and the drain, allowing the device to amplify the signal.
The basic operation of the device can be described as follows: When the gate bias voltage is applied, the electric field created between the source and the drain attracts electrons, forming an conductive path for current to flow. The width of the channel is determined by the voltage applied to the gate. When a small input signal is applied to the gate, the width of the channel can be modulated, allowing current to flow more freely or restricting the flow of current. This allows the device to amplify the input signal.
In summary, the BSP129L6327HTSA1 is a single MOSFET that is commonly used in power management applications. It offers low on-state resistance and is capable of switching currents of up to 1.3A. It has a high voltage rating, making it suitable for use in a wide range of circuits. The device operates by modulating the size of an electric current or voltage that enters the gate. A small input signal applied to the gate can modulate the current flowing between the source and the drain, allowing the device to amplify the signal.
The specific data is subject to PDF, and the above content is for reference
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