| Allicdata Part #: | BSP179H6327XTSA1-ND |
| Manufacturer Part#: |
BSP179H6327XTSA1 |
| Price: | $ 0.36 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 400V 0.21A SOT-223 |
| More Detail: | N-Channel 400V 210mA (Ta) 1.8W (Ta) Surface Mount ... |
| DataSheet: | BSP179H6327XTSA1 Datasheet/PDF |
| Quantity: | 1000 |
| 1000 +: | $ 0.33255 |
| Vgs(th) (Max) @ Id: | 1V @ 94µA |
| Package / Case: | TO-261-4, TO-261AA |
| Supplier Device Package: | PG-SOT223-4 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.8W (Ta) |
| FET Feature: | Depletion Mode |
| Input Capacitance (Ciss) (Max) @ Vds: | 135pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 6.8nC @ 5V |
| Series: | SIPMOS® |
| Rds On (Max) @ Id, Vgs: | 18 Ohm @ 210mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 0V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 210mA (Ta) |
| Drain to Source Voltage (Vdss): | 400V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The BSP179H6327XTSA1 is a P-Channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) made by Nexperia. It offers advanced feature-sets, integrated protection circuits, low on-resistance, and high robustness to environmental conditions, so it is suitable for various end-user applications. It is especially suitable for automotive environments, where high temperature and power must be sustained for long periods of time without fail. In this article, we will go over the applications and working principles of the BSP179H6327XTSA1.
Applications
The BSP179H6327XTSA1 offers superior performance characteristics and is able to withstand extreme temperatures and power conditions. Its low on-state resistance and high maximum operating temperature make it suitable for automotive applications, where it is commonly used for load switching and overcurrent protection.
The BSP179H6327XTSA1 is also used in power-management applications, where it is used to control the power between different supply rails. It can also be used to divert energy from one source to another to avoid overvoltages and excessive current draw.
The device is also used in industrial applications running off mains electricity or power generated from batteries. It can be used to regulate the power flow and also to protect against overcurrent and voltage fluctuations. The device can handle voltages up to 100V and currents up to 4.5A making it suitable for a variety of applications.
Working Principle
The BSP179H6327XTSA1 is an N-channel MOSFET and as such works by creating a conductive path between its drain and source terminals when a signal is present at the gate. This is accomplished by introducing charge carriers to the semiconductor material, which then creates a conducting channel between the drain and source. These charge carriers are electrons, which are attracted to the positive voltage on the gate.
The device is designed to have a low drain-source resistance, which is critical for optimal switching performance. This low resistance allows the device to switch rapidly, and helps to minimize energy losses due to heat. When the drain-source voltage, VDS, is above a certain threshold, the ON resistance, RDS ON, is low, allowing current to flow easily across the channel.
The BSP179H6327XTSA1 also features integrated protection circuits, which help to protect the device from overheating and damage due to overvoltage or current surges. These protection circuits can be configured to trip at certain voltage and current triggers, making the device suitable for industrial applications, as well.
Conclusion
The BSP179H6327XTSA1 is a versatile P-Channel MOSFET with advanced features designed for automotive and industrial applications. It features low on-state resistance and high maximum operating temperature, allowing it to handle voltage up to 100V and currents up to 4.5A. It also features protection circuits for overvoltage and current surges making it suitable for industrial applications.
The specific data is subject to PDF, and the above content is for reference
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| BSP125L6433HTMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 600V 120MA SO... |
| BSP125H6327XTSA1 | Infineon Tec... | -- | 2000 | MOSFET N-CH 600V 120MA SO... |
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| BSP19AT1G | ON Semicondu... | -- | 1000 | TRANS NPN 350V 0.1A SOT22... |
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BSP179H6327XTSA1 Datasheet/PDF