BSS306NH6327XTSA1

Vgs(th) (Max) @ Id:	2V @ 11µA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	500mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	275pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	1.5nC @ 5V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	57 mOhm @ 2.3A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	2.3A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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BSS306NH6327XTSA1 is a n-channel enhancement-mode Field-Effect Transistor (FET) which uses an advanced trench technology to give excellent RDS(on) with low gate charge and operated at the increasing Vdss voltages available today. Since it is an enhancement type FET, it will remain in an OFF state when the gate voltage is zero, requiring an input voltage to be applied to the gate to turn it ON. Automotive grade devices are offered for use in applications which require extra high reliability, temperature cycling, as well as vehicle temperature operating ranges.

Applications

The BSS306NH6327XTSA1 has been specifically developed to handle high current and voltage applications. Its trench MOSFET technology makes this device suitable for a wide range of automotive and industrial motor control applications such as fully integrated DC motor drive, brushesser motor drive, and powertrain motor control. The use of an N-Channel FET implies that the device will require an input voltage to be applied to the gate to turn it ON thus making it an ideal choice for high current or high voltage switching or switching control applications where the gate voltage must remain low for extended periods of time.

Working Principle

The BSS306NH6327XTSA1 is an N-Channel enhancement-mode FET which uses an advanced trench technology to give excellent RDS(on) with low gate charge. The operation of an N-Channel Enhancement-mode FET is based on the fact that a channel is created between the source and drain when a voltage is applied to the gate. When a positive voltage is applied to the gate, it attracts the electrons from the source towards the gate, thus creating a channel between the source and drain. This channel will be sized by the voltage applied to the gate, so that if the gate voltage increases the channel size also increases, thus resulting in an increase in current flow through the device.However, when the gate voltage is zero, the electrons at the gate repel the electrons from the source thus preventing them from passing through to the drain and the device will remain in an OFF state. This is what makes the BSS306NH6327XTSA1 suitable for use as a high voltage or high current switching or switching control device.

Conclusion

The BSS306NH6327XTSA1 is an N-Channel enhancement-mode FET which uses an advanced trench technology to give excellent RDS(on) with low gate charge. This device is ideal for use in high current and voltage applications such as automotive and industrial motor control applications and it is specifically developed to handle high current and voltage applications. The device operates on the principle that a channel is created between the source and drain when a voltage is applied to the gate, with the size of the channel determined by the gate voltage applied. This makes it perfect for use as a high voltage or high current switching or switching control device.

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