Allicdata Part #: | BSS316NH6327XTSA1TR-ND |
Manufacturer Part#: |
BSS316NH6327XTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 1.4A SOT23 |
More Detail: | N-Channel 30V 1.4A (Ta) 500mW (Ta) Surface Mount S... |
DataSheet: | BSS316NH6327XTSA1 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 3.7µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 500mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 94pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 0.6nC @ 5V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 160 mOhm @ 1.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.4A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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BSS316NH6327XTSA1 is a N–Channel enhancement Mode MOSFET, produced by Infineon Technologies and commonly used in electronic applications.
Application Fields of BSS316NH6327XTSA1
BSS316NH6327XTSA1 is mainly applicable to low-voltage, high-current switching applications. It can be used for power management in notebook computer, desktop PCs, hard drives, TV sets, and other consumer electronics. Besides, this MOSFET is ideal for use as main power switch for telephone equipment, telecommunication terminals, LAN, WIFI, and other equipment.
BSS316NH6327XTSA1 can also be used in high-frequency switching applications due to its small form factor and low on-resistance. It is suitable for use in switching power supplies, audio circuits, motor circuits and lighting control applications.
Working Principle of BSS316NH6327XTSA1
BSS316NH6327XTSA1 is a N – Channel enhancement Mode MOSFET, which means it is operated in a manner where the gate and source voltages are held positive relative to the drain. This causes the field-effect transistor to switch between on and off states. When the gate and source voltages are high, the transistor is switched on, allowing the current to flow between drain and source. When the gate and source voltages are reduced, the transistor switches off and current does not flow.
BSS316NH6327XTSA1 has a low on-resistance, which allows the device to control large currents more efficiently, compared to other types of transistors. This makes it an ideal device for use in power applications, where large currents need to be switched in a very fast and efficient manner.
One of the main advantages of using BSS316NH6327XTSA1 is that it can be used in high-voltage applications. The device operates at a maximum drain-source voltage of 100V, which makes it suitable for use in a wide range of electronic applications.
Conclusion
BSS316NH6327XTSA1 is an N–Channel enhancement Mode MOSFET, manufactured by Infineon Technologies. It is mainly used in low-voltage, high-current switching applications, as well as in high-frequency switching applications due to its small form factor and low on-resistance. It can be used for power management in consumer electronics and for switching power supplies, audio circuits, and lighting control applications. Moreover, the device operates at a maximum drain-source voltage of 100V, which makes it suitable for use in applications where high voltages are required.
The specific data is subject to PDF, and the above content is for reference
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