Allicdata Part #: | BSS308PEL6327HTSA1TR-ND |
Manufacturer Part#: |
BSS308PEL6327HTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 30V 2A SOT-23 |
More Detail: | P-Channel 30V 2A (Ta) 500mW (Ta) Surface Mount SOT... |
DataSheet: | BSS308PEL6327HTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 11µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 500mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 500pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 5nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 80 mOhm @ 2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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BSS308PEL6327HTSA1 is a low drain source field effect transistor (FET) manufactured by Infineon Technologies. It is a single N-channel enhancement mode FET with a thin-film polysilicon gate and is designed for use in a wide range of applications. The device works by controlling the voltage between the gate and the drain terminals, which in turn controls the current between the source and drain terminals.
The BSS308PEL6327HTSA1 is built using thin-film polysilicon (TFPS) technology and is available in both a 500 mWatt TO-220 package and a 1000 mWatt TO-247 package. The device is suitable for a wide range of applications, including power management, voltage regulation, solenoid control, motor speed control, and lighting control. Its low on-state resistance (RDS [on]) is capable of providing a high level of current handling capability, making it well suited for applications requiring higher currents. It also features a low gate-source threshold voltage of 2.7V, low threshold-to-drain-voltage ratio of 0.5V, and a wide safe operating area.
The BSS308PEL6327HTSA1 is designed for use in gate drive circuits and other low power applications. It acts as a switch, allowing current to be controlled from the drain terminal. When voltage is applied between the gate and source, the device "turns on" and current may flow between the source and drain terminals. The current is then switched off by reducing the voltage applied between the gate and source. The gate-source voltage can be driven by a number of modern logic levels and is capable of handling up to 5V logic. The device is protected against over-voltage and over-current conditions, protecting the circuit in which it is used.
The BSS308PEL6327HTSA1 is a reliable and cost effective solution for designers looking for a low-power, low-drain FET. Its thin-film technology provides superior switching and temperature performance while its wide safe operating area makes it a great choice for most applications. Its low on-state resistance and low gate-source threshold voltage ensure it can handle high levels of current without compromising its performance. Additionally, the device is designed to be extremely robust, providing optimal protection against over-voltage and over-current conditions. Overall, the BSS308PEL6327HTSA1 is an ideal option for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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