BSS314PEL6327HTSA1

Series:	OptiMOS™
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	140 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id:	2V @ 6.3µA

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<p>BSS314PEL6327HTSA1 is a P-channel enhancement-mode power field effect transistor (FET). It is specifically designed to have high input impedance, low on-state resistance, low gate-source threshold voltage, and low capacitance with extremely fast switching speed. It features protection against transient and electrostatic discharge with low threshold voltage and consist of integrated ESD protection.</p> <p>This FET is made of Silicon (Si) and performance-wise it is an improved precursor of Si technology. Specifically, it provides improved features such as low switching and conduction losses, due to its low gate-source threshold voltage. Also, its floating channel technology eliminates a body diode from the device resulting in a more efficient electrical system.</p><p>When it comes to application field, the BSS314PEL6327HTSA1 is most suitable for high power switching applications. It is applicable for power management in various electronic devices such as battery chargers, notebook PCs, servo drivers, HVAC thermostats, and power supplies. This FET is especially recommended for high-frequency switch mode applications, such as AC-DC converters, motor drives and LED lighting.</p><p>The BSS314PEL6327HTSA1 is a P-channel FET with an n-channel on the inside. It works by forming an n-channel in the semiconductor material between the drain and source. This n-channel is turned on and off by a voltage applied to the gate terminal. When the gate-to-source voltage exceeds the gate threshold voltage, the n-channel is formed and current is allowed to flow from the source to the drain. When the gate-to-source voltage drops substantially below the gate threshold voltage, the n-channel is destroyed and current flow from the source to the drain is blocked.</p><p>In general, FETs are commonly used as amplifier, oscillator, and switch in an electronic system. BSS314PEL6327HTSA1 is an ideal component for power switching applications due to its low conduction and switching losses. Its P-type construction and extremely fast switching speed makes it an ideal component for high-frequency applications.</p>

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