Allicdata Part #: | BSS306NL6327HTSA1TR-ND |
Manufacturer Part#: |
BSS306NL6327HTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 2.3A SOT-23 |
More Detail: | N-Channel 30V 2.3A (Ta) 500mW (Ta) Surface Mount S... |
DataSheet: | BSS306NL6327HTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 11µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 500mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 275pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 1.5nC @ 5V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 57 mOhm @ 2.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.3A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The BSS306NL6327HTSA1 is an advanced MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that is suitable for a variety of applications. It is a single-channel device that is able to deliver high current performance with low resistance levels and power consumption. The device is capable of providing excellent linearity and reliability in a wide range of applications, and is suitable for high frequency switching operations.
The BSS306NL6327HTSA1 features a three-terminal source-drain substrate structure and is designed to operate in the fully depleted mode. This device is commonly used in low voltage digital and analog circuits, as well as in high frequency switching designs. It is also suitable for applications that require fast switching speeds and low operating temperature.
The device is manually activated using a gate voltage, which causes a channel to form between the source and drain electrodes. This channel provides an electrical path (conduction) between the two electrodes and enables current flow. By controlling the gate voltage, the device can be used as a switch to control the current flow in the circuit.
The BSS306NL6327HTSA1 MOSFET operates in the depletion mode, i.e., the channel is normally turned off at zero-gate voltage and is turned on when a gate voltage is applied. The device has an on-resistance of 63 mΩ, a maximum voltage of 20 V, and a drain-source current of 0.3 A.
The device is used in applications such as power management, switching power supplies, sensors, motor control, digital and analog circuits, audio amplifiers, and RF communications. It is especially well-suited for applications that require highly reliable signal transmission, switching speed, and low power dissipation.
In conclusion, the BSS306NL6327HTSA1 MOSFET is an ideal choice for a wide range of applications requiring low power consumption, reliability, and switching speed. The device features a three-terminal source-drain substrate structure and is manually activated using a gate voltage. It is suitable for digital and analog circuits, power management, switching power supplies, sensors, motor control, audio amplifiers, and RF communications.
The specific data is subject to PDF, and the above content is for reference
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