CMPDM202PH BK Allicdata Electronics
Allicdata Part #:

CMPDM202PHBK-ND

Manufacturer Part#:

CMPDM202PH BK

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: MOSFET P-CH 20V SOT-23F
More Detail: P-Channel 20V 2.3A (Ta) 350mW (Ta) Surface Mount S...
DataSheet: CMPDM202PH BK datasheetCMPDM202PH BK Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 5V
Rds On (Max) @ Id, Vgs: 88 mOhm @ 1.2A, 5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Vgs (Max): 12V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V
FET Feature: --
Power Dissipation (Max): 350mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23F
Package / Case: SOT-23-3 Flat Leads
Description

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The CMPDM202PH BK device is a single-type FET (Field Effect Transistor). It is a high-voltage MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed to offer superior performance in power handling and current carrying capacity, while providing excellent stability in the most demanding environments. This FET was developed to be a reliable, cost-effective option for many power system and consumer electronics applications.

The CMPDM202PH BK utilizes an advanced process technology which combines an advanced silicon-on-insulator (SOI) process with an isolation-in-region (I2R) layout to produce superior performance. The low on-resistance properties of the CMPDM202PH BK allow it to operate as a switch with lower power dissipation, potentially extending battery life. The specialized layout of the FETs also minimize coupling and interconnect noise, enhancing system data integrity. Additionally, the device has an integrated high voltage depletion mode MOSFET that provides additional protection to the system.

The CMPDM202PH BK is ideal for a variety of applications including power distribution systems, laser drivers, motor speed control, and power supply design. It offers an optimal combination of performance, power efficiency, and reliability. With its superior power handling capability and low on-resistance property, the CMPDM202PH BK is an ideal solution for many power system and consumer electronic applications.

The working principle of the CMPDM202PH BK is based on the basic principles of FETs. FETs utilize a metal-oxide-semiconductor structure to create an impenetrable barrier between a source and a drain. When bias is applied to the junction between the source and the drain, current flows through the device. As with any FET, the amount of current that can flow through the device depends on the gate voltage applied to the device.

The CMPDM202PH BK utilizes an extremely high voltage depletion mode MOSFET to provide superior performance in power handling and current carrying capacity. This allows the CMPDM202PH BK to be used in high voltage applications, where conventional FETs would be unable to operate. Additionally, the device offers excellent low noise performance, making it ideal for audio or video applications.

The device also offers superior thermal stability, thanks to the silicon-on-insulator (SOI) process which isolates the heat generated by the device within the isolation regions. This helps to reduce power dissipation in the device, consequently enhancing the device’s reliability and extend its life.

The CMPDM202PH BK is an ideal solution for many power system and consumer electronic applications. Its superior performance, low on-resistance property, and thermal stability characteristics make it a reliable and cost-effective solution for many applications. It is also easy to install and use, making it an ideal choice for a wide range of consumer and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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