CMPDM203NH BK

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The CMPDM203NH BK is a single-channel, p-channel EnhFET MOSFET (metal-oxide-semiconductor field-effect transistor) that\'s mainly used in digital and logic circuits, especially in applications where very low-level loads are switching at high speeds. It\'s also used as an analog switch for low-frequency (below 10 MHz) operation. The device offers very low on-resistance and is normally used as an enhancement-mode MOSFET, meaning that it requires an external gate to turn it on.

The CMPDM203NH BK is made up of three terminal connections that include the drain, source, and gate. It\'s important to note that the drain and source are reverse-connected, meaning both terminals are connected in the same direction, whereas the gate is connected opposite to both terminals. In other words, the source is connected in front of the gate, while the drain is connected behind the gate. The source is also connected with a source voltage, while the gate is connected with a gate voltage.

The abbreviation BK stands for Not Extra Atmosperic (NEA), which is a process that is used to increase the actual breakdown voltage of the device. NEA includes an additional step in the manufacturing process to ensure that the devices have a longer lifetime and can survive external shocks and temperature changes without breaking down too soon. The total breakdown voltage for the CMPDM203NH BK is only about 26 volts.

Here\'s a look at how a typical MOSFET works. When the gate is at a voltage that is below the threshold voltage, the MOSFET will be in its off (Straight-off) state. This means that no charge is allowed to pass through any part of the device. When the gate voltage is increased beyond the threshold voltage, then the MOSFET will turn on and it will allow charge to flow from the source to the drain. As the gate voltage is increased further, it can reach the sub-threshold voltage, which is the voltage at which the device will begin to saturate or conduct maximum current.

The CMPDM203NH BK has a drain-source resistance (Rds) of 33 milliohms at 1.8 volts as well as a maximum continuous drain-source current of 36 amps (A, D-S max). The maximum breakdown voltage of the device is 28 volts (Vgs, max). The device has a threshold voltage of -4.5 volts at a junction temperature of 25 Celsius (VGSsth min) and a drain-source capacitance (Cds) of 0.7 pF (F). The device is also capable of operating at temperatures ranging from -55 Celsius to +150 Celsius.

The CMPDM203NH BK is widely used in digital and logic circuits that require low-level loads to be switched quickly and accurately. Applications include power amplifiers, switching supplies, motor control systems, and industrial robotics. The device is also used for analog switching applications due to its low on-resistance and wide temperature range.

In conclusion, the CMPDM203NH BK is a single, p-channel EnhFET MOSFET that\'s used in digital and logic and analog switching applications. It has a low on-resistance and a wide temperature range, and it can be used in applications that require low-level loads to be switched quickly and accurately. It has three connections - drain, source, and gate - and the gate connection is connected in the opposite direction to the source and drain connections. It also has a sub-threshold voltage, a threshold voltage of -4.5 volts, a maximum breakdown voltage of 28 volts, a drain-source resistance of 33 milliohms, a maximum continuous drain-source current of 36 amps, and a drain-source capacitance of 0.7 pF.

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