CPC3703C

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The CPC3703C is a product from Central Semiconductor Corporation and is a 3 terminal, Enhancement Mode field-effect transistor (FET). This product is one of the most commonly used transistors for switching, general purpose amplifying and low speed applications. It is based upon a patented thin film technology process and is characterized by high switching frequencies and low on-state resistance.

The CPC3703C is a N-channel Enhancement Mode FET. This means that the gate-to-source voltage, Vgs, can be applied in either the positive or negative direction, or no gate-to-source voltage can be applied and the FET will still be ‘On’ and conduct electric current. Thus it is suitable for very low voltage applications, such as portable and data communication based applications. It is available in a variety of packages, and comes complete with characterization as an integrated circuit.

The working principle of the CPC3703C is based on the fact that N-Channel Enhancement Mode FETs are designed to switch on and off from very low gate-to-source voltages (typically below 3V). This makes them incredibly useful for low voltage application such as switching and for low bias amplifiers. When the FET is ‘on’, the drain-to-source voltage, Vds, is very low and thus the device acts as a low impedance path from source-to-drain. On the other hand, when the FET is ‘off’, Vds is normally high, giving a high impedance between source and drain.

The CPC3703C is primarily used in switching applications in portable and data communications based applications, as it is capable of switching on and off when Vgs is below 3V. It can also be used in low bias amplifiers, as it has a low on-state resistance and can switch quickly. The FET also has a very high breakdown voltage, high avalanche voltage ratings and a very low EMI signature.

In summary, the CPC3703C is one of the most popular transistors from Central Semiconductor Corporation and is an incredibly useful 3 terminal, Enhancement Mode FET ideal for low voltage applications. It works on the principle of a N-Channel Enhancement Mode FET and is used in switching, general purpose amplifying and low speed applications. The FET also features a very high breakdown voltage, high avalanche voltage ratings and a very low EMI signature.

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