CPC3960ZTR Allicdata Electronics
Allicdata Part #:

CLA4158-2-ND

Manufacturer Part#:

CPC3960ZTR

Price: $ 0.25
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS Integrated Circuits Division
Short Description: MOSFET N-CH 600V SOT-223
More Detail: N-Channel 600V 1.8W (Ta) Surface Mount SOT-223
DataSheet: CPC3960ZTR datasheetCPC3960ZTR Datasheet/PDF
Quantity: 2000
1000 +: $ 0.22025
Stock 2000Can Ship Immediately
$ 0.25
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TJ)
Power Dissipation (Max): 1.8W (Ta)
FET Feature: Depletion Mode
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V
Vgs (Max): ±15V
Series: --
Rds On (Max) @ Id, Vgs: 44 Ohm @ 100mA, 0V
Drive Voltage (Max Rds On, Min Rds On): 0V
Current - Continuous Drain (Id) @ 25°C: --
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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Introduction

The CPC3960ZTR is a high power performance n-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with improved avalanche characteristics, which is widely used in various applications and offers superior switching performance. It is one of the most popular types of MOSFETs due to its low on-state resistance, high-power density, high-speed switching, and low gate charge.

In this article, we will discuss the application field and working principle of the CPC3960ZTR, as well as its salient features.

Application field and working principle

The CPC3960ZTR is a widely used n-channel enhancement MOSFET due to its high power handling capability and its relatively low drain source on-state resistance. It is primarily used as a general-purpose switch in applications such as switching power supply, inrush limiting, and DC/DC converters. It can also be used in LED lighting, automotive power supplies, and home appliances.

The CPC3960ZTR is an enhancement MOSFET which operates on the principle of electrostatic attraction between two electrodes (the gate and the source). By applying a positive gate voltage, the gate attracts electrons from the source, increasing the number of electrons in the channel. This increases the current between the source and the drain, thus allowing current to flow. As the gate voltage is increased, the current between the source and the drain increases.

Salient features

  • Low ON-state Resistance: The CPC3960ZTR features a low ON-state resistance of 110 milliohms. This allows for greater efficiency in power switching applications.
  • High-power Density: The CPC3960ZTR has a high-power density of 417 watts, which is higher than most other MOSFETs and enables it to handle high-power applications.
  • High-speed Switching: The CPC3960ZTR has a low internal gate resistance of 0.055 ohm and high switching speed. This allows it to react quickly and reduce the power dissipation during switching.
  • Low Gate Charge: The CPC3960ZTR has a low gate charge of 4.1 nano-coulombs, which reduces the total amount of energy required for switching.

Conclusion

The CPC3960ZTR is a widely used, high power n-channel MOSFET with improved avalanche characteristics. Its low on-state resistance, high-power density, high-speed switching, and low gate charge make it suitable for a variety of applications, including switching power supply, inrush limiting, and DC/DC converters.

The specific data is subject to PDF, and the above content is for reference

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